Determination of Secondary-Ions Yield in SIMS Depth Profiling of Si, Mg, and C Ions Implanted Gan Epitaxial Layers

2018 ◽  
Author(s):  
M. Tapajna ◽  
A. Vincze ◽  
P. Noga ◽  
J. Dobrovodsky ◽  
A. Svagatova ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Epitaxial Layers ◽  
Secondary Ions ◽  
Sims Depth Profiling

Determination of the sputtering yield of cholesterol using Arn+ and C60+(+) cluster ions

The Analyst ◽  
2016 ◽  
Vol 141 (16) ◽  
pp. 4893-4901 ◽  
Author(s):  
P. D. Rakowska ◽  
M. P. Seah ◽  
J.-L. Vorng ◽  
R. Havelund ◽  
I. S. Gilmore
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Cluster Ions ◽  
Sputtering Yield ◽  
Sims Depth Profiling

Comparison of C60+(+) and Arn+ as sputtering ions for SIMS depth profiling of cholesterol thin films.

Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis

2007 ◽  
Vol 39 (11) ◽  
pp. 898-901 ◽  
Author(s):  
R. J. H. Morris ◽  
M. G. Dowsett ◽  
S. H. Dalal ◽  
D. L. Baptista ◽  
K. B. K. Teo ◽  
...  
Keyword(s):  
Gold Catalyst ◽  
Depth Profiling ◽  
Zno Nanowires ◽  
Profiling Analysis ◽  
Sims Depth Profiling

SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell

2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim
Keyword(s):  
Solar Cell ◽  
Depth Profiling ◽  
Profiling Analysis ◽  
Sims Depth Profiling
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