Use of cluster secondary ions for minimization of matrix effects in the SIMS depth profiling of La/B4C multilayer nanostructures

Author(s):  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
M. M. Barysheva ◽  
V. N. Polkovnikov ◽  
N. I. Chkhalo
2005 ◽  
Vol 908 ◽  
Author(s):  
Peter Huber ◽  
Helmut Karl ◽  
Bernd Stritzker

AbstractWe present a method of determining elemental depth profiles with secondary ion mass spectrometry (SIMS) corrected by all non-linearities between the SIMS countrate and the elemental concentration caused by chemical matrix effects, resulting in an absolute concentration depth profile. The key to this method is a low dose ion implantation step of corresponding reference isotopes prior to SIMS depth profiling. Spectra evaluation is performed on the basis of a selfconsistent evaluation in which the depth dependent influence of the matrix is determined. The technique is demonstrated for sequentially high dose ion implanted Cd and Se in SiO2.


2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim

1991 ◽  
Vol 17 (3) ◽  
pp. 158-164 ◽  
Author(s):  
A. M. C. Kilner ◽  
J. A. Kilner ◽  
J. C. Elliott ◽  
G. Cressey ◽  
S. D. Littlewood

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