The features of using of BO2− secondary ions for SIMS depth profiling of shallow boron implantation in silicon

Applied Surface Science ◽

10.1016/s0169-4332(02)00667-0 ◽

2003 ◽

Vol 203-204 ◽

pp. 314-317 ◽

Author(s):

S.G. Simakin ◽

V.K. Smirnov

Keyword(s):

Depth Profiling ◽

Secondary Ions ◽

Boron Implantation ◽

Sims Depth Profiling

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Determination of Secondary-Ions Yield in SIMS Depth Profiling of Si, Mg, and C Ions Implanted Gan Epitaxial Layers

2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) ◽

10.1109/asdam.2018.8544657 ◽

2018 ◽

Author(s):

M. Tapajna ◽

A. Vincze ◽

P. Noga ◽

J. Dobrovodsky ◽

A. Svagatova ◽

...

Keyword(s):

Depth Profiling ◽

Epitaxial Layers ◽

Secondary Ions ◽

Sims Depth Profiling

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SIMS depth profiling of Pd/B4C, Ni/C, and Cr/Sc multilayer metal structures using registration of cluster secondary ions: The problem of depth resolution enhancement

Bulletin of the Russian Academy of Sciences Physics ◽

10.3103/s1062873811010096 ◽

2011 ◽

Vol 75 (1) ◽

pp. 100-104 ◽

Author(s):

M. N. Drozdov ◽

Yu. N. Drozdov ◽

M. M. Barysheva ◽

V. N. Polkovnikov ◽

N. I. Chkhalo

Keyword(s):

Resolution Enhancement ◽

Depth Profiling ◽

Depth Resolution ◽

Metal Structures ◽

Secondary Ions ◽

Sims Depth Profiling ◽

Multilayer Metal

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An effect of residual gas component on detected secondary ions during TOF-SIMS depth profiling and a method to estimate contained component

Surface and Interface Analysis ◽

10.1002/sia.6479 ◽

2018 ◽

Vol 50 (8) ◽

pp. 802-806 ◽

Author(s):

Junichiro Sameshima ◽

Masanobu Yoshikawa

Keyword(s):

Depth Profiling ◽

Tof Sims ◽

Secondary Ions ◽

Residual Gas ◽

Gas Component ◽

Sims Depth Profiling

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Use of cluster secondary ions for minimization of matrix effects in the SIMS depth profiling of La/B4C multilayer nanostructures

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451010050216 ◽

2010 ◽

Vol 4 (5) ◽

pp. 807-810 ◽

Author(s):

M. N. Drozdov ◽

Yu. N. Drozdov ◽

M. M. Barysheva ◽

V. N. Polkovnikov ◽

N. I. Chkhalo

Keyword(s):

Matrix Effects ◽

Depth Profiling ◽

Multilayer Nanostructures ◽

Secondary Ions ◽

Sims Depth Profiling

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SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell

Surface and Interface Analysis ◽

10.1002/sia.5407 ◽

2014 ◽

Vol 46 (S1) ◽

pp. 341-343

Author(s):

Tae Woon Kim ◽

Hyun Jeong Baek ◽

Jong Shik Jang ◽

Seung Mi Lee ◽

Kyung Joong Kim

Keyword(s):

Depth Profiling ◽

Profiling Analysis ◽

Sims Depth Profiling

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The effect of orientation on ion beam erosion rates in ionic crystals measured by SIMS depth profiling

Surface and Interface Analysis ◽

10.1002/sia.740170307 ◽

1991 ◽

Vol 17 (3) ◽

pp. 158-164 ◽

Author(s):

A. M. C. Kilner ◽

J. A. Kilner ◽

J. C. Elliott ◽

G. Cressey ◽

S. D. Littlewood

Keyword(s):

Ion Beam ◽

Depth Profiling ◽

Ionic Crystals ◽

Erosion Rates ◽

Sims Depth Profiling

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SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258083 ◽

2002 ◽

Author(s):

Yupu Li Yupu Li ◽

J. Shyue ◽

J. Hunter ◽

B. McComb ◽

M. Chun ◽

...

Keyword(s):

Lower Energy ◽

Depth Profiling ◽

Sims Depth Profiling

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Metrology aspects of SIMS depth profiling for advanced ULSI processes

The 1998 international conference on characterization and metrology for ULSI technology ◽

10.1063/1.56792 ◽

1998 ◽

Author(s):

Andre Budrevich ◽

Jerry Hunter

Keyword(s):

Depth Profiling ◽

Sims Depth Profiling

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Dating Micrometre-Thin Rims Using a LA-ICP-MS Depth Profiling Technique on Zircon from an Archaean Metasediment: Comparison with the SIMS Depth Profiling Method

Geostandards and Geoanalytical Research ◽

10.1111/j.1751-908x.2014.00314.x ◽

2014 ◽

Vol 38 (4) ◽

pp. 389-407 ◽

Author(s):

Colter J. Kelly ◽

Christopher R.M. McFarlane ◽

David A. Schneider ◽

Simon E. Jackson

Keyword(s):

Depth Profiling ◽

Icp Ms ◽

Sims Depth Profiling

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SIMS depth profiling for the characterization of Si-SiO2 structures

Applications of Surface Science ◽

10.1016/0378-5963(80)90002-1 ◽

1980 ◽

Vol 4 (1) ◽

pp. 1-10 ◽

Author(s):

I. Bársony ◽

J. Giber

Keyword(s):

Depth Profiling ◽

Sims Depth Profiling

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