Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

2019 ◽  
Author(s):  
Dao Dinh Ha ◽  
Tran Tuan Trung ◽  
Nguyen Trong Quang ◽  
Ivan Lovshenko ◽  
Veranika Khanko ◽  
...  
Keyword(s):  
Charged Particle ◽  
Heavy Charged Particle ◽  
Electrical Characteristics ◽  
Device Structure

scholarly journals Modeling the impacts of heavy charged particles on electrical characteristics of n-MOSFET device structure

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 55-62
Author(s):  
I. Yu. Lovshenko ◽  
V. R. Stempitsky ◽  
V. T. Shandarovich
Keyword(s):  
Charged Particle ◽  
Radiation Effects ◽  
Outer Space ◽  
Charged Particles ◽  
Drain Current ◽  
Heavy Charged Particle ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Heavy Charged Particles ◽  
The Impact

The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greatest influence is exerted by radiation effects caused by exposure to a heavy charged particle. The use of special design tools in the development of dual-purpose microcircuits, with increased resistance to the impact of heavy charged particles, prevents single events from occurring. Thus, the use of modern software products for device and technological modeling in microelectronics when developing the element base of radiation-resistant microcircuits for space purposes will cut the time to develop new products and make it possible to modernize (improve performance) already existing device and circuitry solutions. The paper delivers the results of modeling the impacts of heavy charged particles with a magnitude of linear energy transfer equal to 1.81, 10.1, 18.8, 55.0 MeV·cm2/mg, corresponding to nitrogen ions 15N+4 with an energy E = 1,87 MeV; argon 40Ar+12 with an energy E = 372 MeV; ferrum 56Fe+15 with an energy E = 523 MeV; xenon 131Xe+35 with an energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure. The dependences of the maximum drain current IС on the motion trajectory of a heavy charged particle and the ambient temperature are shown.

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

Biological Imaging of Heavy Charged-Particle Tracks

2003 ◽  
Vol 159 (5) ◽  
pp. 676-684 ◽  
Author(s):  
B. Jakob ◽  
M. Scholz ◽  
G. Taucher-Scholz
Keyword(s):  
Charged Particle ◽  
Biological Imaging ◽  
Heavy Charged Particle ◽  
Particle Tracks

Beam scanning for heavy charged particle radiotherapy

1983 ◽  
Vol 10 (6) ◽  
pp. 831-840 ◽  
Author(s):  
Michael Goitein ◽  
George T. Y. Chen
Keyword(s):  
Charged Particle ◽  
Heavy Charged Particle ◽  
Beam Scanning ◽  
Particle Radiotherapy
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