The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Keyword(s):
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.
2020 ◽
Vol 21
(3)
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pp. 339-347
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2015 ◽
Vol 36
(4)
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pp. 309-311
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2022 ◽
Vol 12
(1)
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pp. 201
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2016 ◽
Vol 59
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pp. 30-36
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2012 ◽
Vol 229-231
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pp. 824-827
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