Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) ◽

10.1109/bctm.2012.6352650 ◽

2012 ◽

Author(s):

E. Canderle ◽

P. Chevalier ◽

A. Montagne ◽

L. Moynet ◽

G. Avenier ◽

...

Keyword(s):

Base Resistance ◽

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Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance

IEEE Electron Device Letters ◽

10.1109/edl.1986.26400 ◽

1986 ◽

Vol 7 (6) ◽

pp. 359-362 ◽

Author(s):

R. Fischer ◽

H. Morkoc

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Base Resistance ◽

Extrinsic Base ◽

High Frequency Performance

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Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base

IEEE Electron Device Letters ◽

10.1109/led.2005.844697 ◽

2005 ◽

Vol 26 (4) ◽

pp. 246-248

Author(s):

B.G. Malm ◽

E. Haralson ◽

E. Suvar ◽

H.H. Radamson ◽

Yong-Bin Wang ◽

...

Keyword(s):

Base Resistance ◽

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Simple determination of BJT extrinsic base resistance

Electronics Letters ◽

10.1049/el:19911176 ◽

1991 ◽

Vol 27 (21) ◽

pp. 1895 ◽

Author(s):

T. Zimmer ◽

A. Meresse ◽

Ph. Cazenaveand ◽

J.P. Dom

Keyword(s):

Base Resistance ◽

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Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/9/095020 ◽

2014 ◽

Vol 29 (9) ◽

pp. 095020 ◽

Author(s):

E Ramirez-Garcia ◽

N Zerounian ◽

F Aniel ◽

L A Valdez-Monroy ◽

L M Rodriguez-Mendez ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Doping Level ◽

Bipolar Transistors ◽

Base Resistance ◽

Germanium Content ◽

Dynamic Performances ◽

Extrinsic Base ◽

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Improvement of Current Gain in Triple Ion Implanted 4H-SiC Bipolar Junction Transistor with Etched Extrinsic Base Regions

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.130.2188 ◽

2010 ◽

Vol 130 (12) ◽

pp. 2188-2191

Author(s):

Taku Tajima ◽

Tadashi Nakamura ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Current Gain ◽

Bipolar Junction Transistor ◽

Junction Transistor ◽

Extrinsic Base ◽

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INVESTIGATION OF SHAFT AND BASE RESISTANCE OF A SINGLE BORED PILE USING OSTERBERG CELL

JES. Journal of Engineering Sciences ◽

10.21608/jesaun.2007.114319 ◽

2007 ◽

Vol 35 (4) ◽

pp. 853-867

Author(s):

Mohamed Hamed Hussein ◽

Mostafa Abdou Abd El-Naiem ◽

Ahmed Rushdy Towfeek

Keyword(s):

Base Resistance ◽

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AlGaAs/GaAs HBTs with reduced base-collector capacitance by using buried SiO/sub 2/ and polycrystalline GaAs in the extrinsic base and collector

10.1109/drc.1993.1009596 ◽

2005 ◽

Author(s):

K. Mochizuki ◽

T. Nakamura ◽

T. Tanoue ◽

H. Masuda ◽

M. Horiuchi

Keyword(s):

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12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

IEEE Transactions on Electron Devices ◽

10.1109/16.644638 ◽

1997 ◽

Vol 44 (12) ◽

pp. 2207-2212 ◽

Author(s):

T. Onai ◽

E. Ohue ◽

M. Tanabe ◽

K. Washio

Keyword(s):

Bipolar Transistor ◽

Base Resistance

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Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1997.647432 ◽

2002 ◽

Author(s):

S.J. Jeng ◽

D.C. Ahlgren ◽

G.D. Berg ◽

B. Ebersman ◽

G. Freeman ◽

...

Keyword(s):

Base Process ◽

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The effect of extrinsic base encroachment on the switch-on transient of advanced narrow-emitter bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.2456 ◽

1988 ◽

Vol 35 (3) ◽

pp. 309-313 ◽

Author(s):

C.T. Chuang

Keyword(s):

Bipolar Transistors ◽

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