Purpose
This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case.
Design/methodology/approach
The idea of measurements of mutual transient thermal impedances of the investigated device is described.
Findings
The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out.
Research limitations/implications
The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials.
Originality/value
The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.
Extraction and modelling of self-heating and mutual thermal coupling impedance of bipolar transistors
