A triangular decomposition method with controlling parameter for cyclic block tridiagonal systems in coupled fields analysis

Author(s):  
Jinming Wang ◽  
Dexin Xie ◽  
Yu Tian
Optimization ◽  
1975 ◽  
Vol 6 (4) ◽  
pp. 549-559
Author(s):  
L. Gerencsér

2018 ◽  
Vol 77 (11) ◽  
pp. 945-956 ◽  
Author(s):  
N. N. Kolchigin ◽  
M. N. Legenkiy ◽  
A. A. Maslovskiy ◽  
А. Demchenko ◽  
S. Vinnichenko ◽  
...  

2020 ◽  
Vol 2020 (14) ◽  
pp. 293-1-293-7
Author(s):  
Ankit Manerikar ◽  
Fangda Li ◽  
Avinash C. Kak

Dual Energy Computed Tomography (DECT) is expected to become a significant tool for voxel-based detection of hazardous materials in airport baggage screening. The traditional approach to DECT imaging involves collecting the projection data using two different X-ray spectra and then decomposing the data thus collected into line integrals of two independent characterizations of the material properties. Typically, one of these characterizations involves the effective atomic number (Zeff) of the materials. However, with the X-ray spectral energies typically used for DECT imaging, the current best-practice approaches for dualenergy decomposition yield Zeff values whose accuracy range is limited to only a subset of the periodic-table elements, more specifically to (Z < 30). Although this estimation can be improved by using a system-independent ρe — Ze (SIRZ) space, the SIRZ transformation does not efficiently model the polychromatic nature of the X-ray spectra typically used in physical CT scanners. In this paper, we present a new decomposition method, AdaSIRZ, that corrects this shortcoming by adapting the SIRZ decomposition to the entire spectrum of an X-ray source. The method reformulates the X-ray attenuation equations as direct functions of (ρe, Ze) and solves for the coefficients using bounded nonlinear least-squares optimization. Performance comparison of AdaSIRZ with other Zeff estimation methods on different sets of real DECT images shows that AdaSIRZ provides a higher output accuracy for Zeff image reconstructions for a wider range of object materials.


Author(s):  
B. Domengès ◽  
P. Poirier

Abstract In this study, the resistance of FIB prepared vias was characterized by the Kelvin probe technique and their physical characteristics studied using cross-sectional analysis. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the via metal (Pt). Also submicrometer vias were investigated on 4.2 µm deep metal lines of a BiCMOS aluminum based design and a CMOS 090 copper based one. It is shown that the controlling parameter is the shape and volume of the contact, and that the contact formation is favored by the amount of over-mill of the via into the metal line it will contact.


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