InGaAs/InP heterojunction bipolar transistors with low offset voltage and current blocking

2004 ◽  
Author(s):  
Shu-Han Chen ◽  
Meng-Lin Lee ◽  
Po-Han Chen ◽  
Sheng-Yu Wang ◽  
Ming-Yuan Tseng ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset ◽  
Current Blocking

scholarly journals MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors

2002 ◽  
Vol 25 (3) ◽  
pp. 239-243
Author(s):  
K. F. Yarn
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Gain ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Offset Voltage ◽  
Delta Doping ◽  
Spacer Layer ◽  
Potential Spike ◽  
Low Offset

The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

scholarly journals High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

2003 ◽  
Vol 50 (10) ◽  
pp. 2154-2158 ◽  
Author(s):  
Bei-Ping Yan ◽  
E.S. Yang ◽  
Yue-Fei Yang ◽  
Xiao-Qin Wang ◽  
Chung-Chi Hsu
Keyword(s):  
Thermal Management ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset

A Novel GaAs Bipolar Transistor Structure with GaInP-Hole Injection Blocking Barrier

1991 ◽  
Vol 240 ◽  
Author(s):  
W. Pletschen ◽  
K. H. Bachem ◽  
T. Lauterbach
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gaas Layer ◽  
Bipolar Transistors ◽  
Hole Injection ◽  
Collector Current ◽  
Offset Voltage ◽  
Layer Structures ◽  
Current Densities ◽  
Output Characteristics ◽  
Base Doping

ABSTRACTGaAs bipolar transistors of different emitter types have been fabricated from MOCVD grown lattice matched Ga0.5In0.5 P/GaAs layer structures using carbon for heavy base doping (p=2×1019 cm−3). Besides conventional heterojunction bipolar transistors we also investigated tunneling emitter bipolar transistors having 2 and 5 nm thin GalnP layers between emitter and base, which act as a hole repelling potential barrier in the valence band. Current gains up to 115 have been obtained at collector current densities of 104 A/cm2 even for this heavy base doping. All devices show an almost ideal output characteristics with large Early voltage and small offset voltage. From the temperature dependence of the collector current a small effective conduction band barrier at the heterointerface is determined which hardly affects electron injection into the base.

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