Long-term stability of ICPCVD a-Si under prolonged heat treatment

Author(s):  
Kirsten L. Brookshire ◽  
Mariusz Martyniuk ◽  
K. K. M. B. Dilusha Silva ◽  
Yinong Liu ◽  
Lorenzo Faraone
1977 ◽  
Vol 4 (3-4) ◽  
pp. 133-137 ◽  
Author(s):  
Jürgen Griessing

A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by reactive sputtering in an Ar-atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.


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