Reactive Sputtering of NiCr Resistors With Closely Adjustable Temperature Coefficient of Resistance
1977 ◽
Vol 4
(3-4)
◽
pp. 133-137
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Keyword(s):
A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by reactive sputtering in an Ar-atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.
1984 ◽
Vol 116
(1-3)
◽
pp. 205-210
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Keyword(s):
Keyword(s):
2012 ◽
Vol 33
(8-9)
◽
pp. 1758-1770
2021 ◽
Vol 46
(2)
◽
pp. 2824-2834
1998 ◽
Vol 66
(5)
◽
pp. 537-542
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