A simple model for ultra-low specific contact resistivity metal- interfacial layer -semiconductor contacts

2015 ◽  
Author(s):  
Bencheng Huang ◽  
Yingming Liu ◽  
Xuezhen Jing ◽  
Beichao Zhang ◽  
Jingang Wu ◽  
...  
Keyword(s):  
Simple Model ◽  
Interfacial Layer ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Semiconductor Contacts ◽  
Specific Contact Resistivity

Investigation of Cu-Ge/Gaas Metal-Semiconductor Interfaces for Low Resistance Ohmic Contacts

1996 ◽  
Vol 448 ◽  
Author(s):  
Serge Oktyabrsky ◽  
M.A. Borek ◽  
M.O. Aboelfotoh ◽  
J. Narayan
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
High Thermal Stability ◽  
Contact Resistivity ◽  
Polycrystalline Layer ◽  
Ohmic Behavior ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
Specific Contact ◽  
Specific Contact Resistivity

AbstractChemistry and interfacial reactions of the Cu-Ge alloyed ohmic contacts to n-GaAs with extremely low specific contact resistivity (6.5×10-7 Ω·cm2 for n~1017 cm-3) have been investigated by transmission electron microscopy, EDX and SIMS. Unique properties of the contact layers are related to the formation (at Ge concentration above 15 at.%) of a polycrystalline layer of ordered orthorhombic ε1-Cu3Ge phase. Formation of the ε1-phase is believed to be responsible for high thermal stability, interface sharpness and uniform chemical composition. The results suggest that the formation of the ζ- and ε1,-Cu3Ge phases creates a highly Ge-doped n+-GaAs interfacial layer which provides the low contact resistivity. Layers with Ge deficiency to form ζ-phase show nonuniform intermediate layer of hexagonal β-Cu3As phase which grows epitaxially on Ga{111} planes of GaAs. In this case, released Ga diffuses out and dissolves in the alloyed layer stabilizing the ζ-phase which is formed in the structures with average Ge concentration of as low as 5 at.%. These layers also exhibit ohmic behavior.

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

2014 ◽  
Vol 35 (11) ◽  
pp. 1076-1078 ◽  
Author(s):  
Gwang-Sik Kim ◽  
Jeong-Kyu Kim ◽  
Seung-Hwan Kim ◽  
Jaesung Jo ◽  
Changhwan Shin ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Ar Plasma

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

2018 ◽  
Author(s):  
Ying Wu ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Yang Li ◽  
Kaizhen Han ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type
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