Effects of film thickness and annealing temperature on the specific contact resistivity and the transmittance of the IZO Layers Grown on p-GaN by Roll-to-roll Sputtering

2010 ◽  
Vol 48 (6) ◽  
Keyword(s):  
Film Thickness ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Roll To Roll ◽  
Specific Contact ◽  
Specific Contact Resistivity

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

2018 ◽  
Author(s):  
Ying Wu ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Yang Li ◽  
Kaizhen Han ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

scholarly journals Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering

2018 ◽  
Vol 6 (1) ◽  
pp. 1801285 ◽  
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Enrique G. Marin ◽  
Teresa Cusati ◽  
Alessandro Fortunelli ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Contact Engineering

Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation

2013 ◽  
Vol 103 (4) ◽  
pp. 043902 ◽  
Author(s):  
Patrick J. Taylor ◽  
Jay R. Maddux ◽  
Greg Meissner ◽  
Rama Venkatasubramanian ◽  
Gary Bulman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermoelectric Materials ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

2016 ◽  
Vol 25 (11) ◽  
pp. 118101
Author(s):  
Shu-Zhen Yu ◽  
Yan Song ◽  
Jian-Rong Dong ◽  
Yu-Run Sun ◽  
Yong-Ming Zhao ◽  
...  
Keyword(s):  
Annealing Process ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity

scholarly journals Ohmic contacts to Si-implanted and un-implanted n-type GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Brown ◽  
J Ramer ◽  
K. ZHeng ◽  
L.F. Lester ◽  
S.D. Hersee ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Contact Structures ◽  
Specific Contact Resistance ◽  
Resistance Variation ◽  
Specific Contact ◽  
Metal Layers ◽  
Nitrogen Vacancies

ABSTRACTWe report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N2 at temperatures of 700, 800, and 900°C, A minimum specific contact resistance (rc) of 1.4×10−5 Ω-cm2 was measured for Ti/Al at an annealing temperature of 800°C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500 µm distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95% to 10% by annealing at 900°C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120°C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.

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