Record low specific contact resistivity (1.2×10−9 Ω-cm2) for P-type semiconductors: Incorporation of Sn into Ge and in-Situ Ga doping

2017 ◽  
Author(s):  
Ying Wu ◽  
Sheng Luo ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Dian Lei ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type ◽  
Ga Doping

Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10 Ω-cm2

2018 ◽  
Author(s):  
Ying Wu ◽  
Wei Wang ◽  
Saeid Masudy-Panah ◽  
Yang Li ◽  
Kaizhen Han ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C

2014 ◽  
Vol 778-780 ◽  
pp. 681-684 ◽  
Author(s):  
Katarina Smedfors ◽  
Luigia Lanni ◽  
Mikael Östling ◽  
Carl Mikael Zetterling
Keyword(s):  
Extreme Temperature ◽  
Contact Resistivity ◽  
Temperature Measurements ◽  
Time Increase ◽  
Operational Temperature ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type ◽  
Type Nickel

Extreme temperature measurements of Ni/Ti/Al contacts to p-type SiC (Na= 1∙1018cm-3), with a specific contact resistivity ρc= 6.75∙10-4Ωcm2at 25 °C, showed a five time increase of the specific contact resistivity at -40 °C (ρc= 3.16∙10-3Ωcm2), and a reduction by almost a factor 10 at 500 °C (ρc= 7.49∙10-5Ωcm2). The same response of ρcto temperature was seen for contacts on lower doped epitaxial layer. Also N-type nickel contacts improved with higher operational temperature but with a considerably smaller variation over the same temperature interval. No degradation of the performance was seen to either the Ni/Ti/Al or the Ni contacts due to the high temperature measurements.

Metal/P-type GeSn Contacts with Ultra-low Specific Contact Resistivity

2019 ◽  
Author(s):  
Xiao Gong ◽  
Ying Wu ◽  
Haiwen Xu ◽  
Kaizhen Han ◽  
Lye-Hing Chua ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

scholarly journals Using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors

2015 ◽  
Vol 28 (3) ◽  
pp. 457-464
Author(s):  
Aaron Collins ◽  
Yue Pan ◽  
Anthony Holland
Keyword(s):  
Three Dimensional ◽  
Contact Resistivity ◽  
Test Structure ◽  
Contact Structures ◽  
Experimental Measurements ◽  
Circular Test ◽  
Bulk Semiconductors ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)?10-6 ??cm2 for the Ni-Ge contacts and (1.3-2.4)?10-3 ??cm2 for the Ti-SiC.

Low Resistance Contacts to P-Type GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Taek Kim ◽  
Jinseok Khim ◽  
Suhee Chae ◽  
Taeil Kim
Keyword(s):  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Resistivity ◽  
Low Resistance ◽  
Sapphire Substrates ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

ABSTRACTWe report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 697-700 ◽  
Author(s):  
Michael R. Jennings ◽  
Amador Pérez-Tomás ◽  
D. Walker ◽  
Lin Zhu ◽  
Peter A. Losee ◽  
...  
Keyword(s):  
Microstructural Analysis ◽  
Contact Resistivity ◽  
Metal Contact ◽  
Metal Contacts ◽  
Low Resistance ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type ◽  
Post Deposition

In this work, we have investigated triple and innovative multiple stacked contacts onto ptype SiC in order to evaluate whether or not there is any improvement in morphology or specific contact resistivity. The stacked metal contacts are based on Al, Ti and Ni with the specific contact resistivity measured at a low value of 5.02×10-6'cm2 for an Al(100 nm)/Ti(100 nm)/Al(10 nm) (where a “/” indicates the deposition sequence) triple stacked metal contact. XRD microstructural analysis and SEM measurements have been carried out and it has been discovered that the contacts, which formed the compound Ti3SiC2 at the metal/SiC interface, more readily display low-resistance ohmic characteristics after a post deposition anneal. Although the same amount of Ti (100 nm in total) has been deposited closer to the metal/SiC interface, none of the multiple stacked structures displayed ohmic behaviour after a post deposition anneal.

Sign in / Sign up

Export Citation Format

Share Document