Atomically Thin p-doping Layer and Record High Hole Current on WSe2

Author(s):  
Terry Y.T. Hung ◽  
Chin-Sheng Pang ◽  
Xiangkai Liu ◽  
Dmitry Zemlyanov ◽  
Zhihong Chen
Keyword(s):  
Author(s):  
Shosuke Fujii ◽  
Ryota Fujitsuka ◽  
Katsuyuki Sekine ◽  
Haruka Kusai ◽  
Kiwamu Sakuma ◽  
...  
Keyword(s):  

1986 ◽  
Vol 49 (11) ◽  
pp. 669-671 ◽  
Author(s):  
I. C. Chen ◽  
S. Holland ◽  
K. K. Young ◽  
C. Chang ◽  
C. Hu
Keyword(s):  

1972 ◽  
Vol 21 (9) ◽  
pp. 417-419 ◽  
Author(s):  
J.F. Verwey
Keyword(s):  

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 913-919 ◽  
Author(s):  
Fadhil K. Alfadhili ◽  
Adam B. Phillips ◽  
Geethika K. Liyanage ◽  
Jacob M. Gibbs ◽  
Manoj K. Jamarkattel ◽  
...  

ABSTRACTFormation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the barrier for the hole current, improving open circuit voltage (VOC) and the fill factor. Over the past years, researchers have incorporated the both ZnTe and Te as buffer layers to improve CdTe device performance. Here we compare device performance using these two materials as buffer layers at the back of CdTe devices. We show that using Te in contact to CdTe results in higher performance than using ZnTe in contact to the CdTe. Low temperature current density-voltage measurements show that Te results is a lower barrier with CdTe than ZnTe, indicating that Te has better band alignment, resulting in less downward bending in the CdTe at the back interface, than ZnTe does.


1977 ◽  
Vol 55 (2) ◽  
pp. 103-115 ◽  
Author(s):  
S. T. Pai ◽  
J. P. Marton

In bulk and thin film metal samples, a net migration of material may take place when electrical current is passed through the sample at an elevated temperature. The migration is due to the passage of electron (or hole) current, the electrostatic force on the metal ions, and the temperature gradient in the sample. The extent and the direction of net migration has not been predicted satisfactorily by existing theories, leaving many unexplained anomalous experimental results. The present work is the development of a generalized theory that contains the main features of previous theories. It can explain all major experimental observations. Its main features include predictions on the temperature and time dependence of migration, its direction, its reversal temperature, and the approximate sample position that is affected most. The theory has been used to interpret available experimental data on a number of electron- and hole-type metals.


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