Influence of interface traps on the performance of Tunnel FETs

2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S) ◽

10.1109/e3s.2015.7336798 ◽

2015 ◽

Author(s):

D. Esseni ◽

M. Pala ◽

E. Gnani ◽

E. Sangiorgi

Keyword(s):

Interface Traps ◽

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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs

2017 17th International Workshop on Junction Technology (IWJT) ◽

10.23919/iwjt.2017.7966505 ◽

2017 ◽

Author(s):

Andreas Schenk ◽

Saurabh Sant ◽

Kirsten Moselund ◽

Heike Riel

Keyword(s):

Interface Traps ◽

Oxide Interface ◽

Tunnel Fets ◽

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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085317 ◽

2017 ◽

Author(s):

A. Schenk ◽

S. Sant ◽

K. Moselund ◽

H. Riel ◽

E. Memisevic ◽

...

Keyword(s):

Interface Traps ◽

Oxide Interface ◽

Tunnel Fets ◽

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(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

ECS Transactions ◽

10.1149/06102.0237ecst ◽

2014 ◽

Vol 61 (2) ◽

pp. 237-251

Author(s):

M. Pala ◽

D. Esseni

Keyword(s):

Interface Traps ◽

Transfer Characteristics ◽

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Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

2012 International Electron Devices Meeting ◽

10.1109/iedm.2012.6478992 ◽

2012 ◽

Author(s):

M. G. Pala ◽

D. Esseni ◽

F. Conzatti

Keyword(s):

Interface Traps ◽

Tunnel Fets ◽

Iv Curves ◽

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Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2274196 ◽

2013 ◽

Vol 60 (9) ◽

pp. 2795-2801 ◽

Author(s):

Marco G. Pala ◽

David Esseni

Keyword(s):

Model Description ◽

Interface Traps ◽

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Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 2: Simulation Study of the Impact of Interface Traps

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2612484 ◽

2016 ◽

Vol 63 (11) ◽

pp. 4240-4247 ◽

Author(s):

Saurabh Sant ◽

Kirsten Moselund ◽

Davide Cutaia ◽

Heinz Schmid ◽

Mattias Borg ◽

...

Keyword(s):

Simulation Study ◽

Interface Traps ◽

Tunnel Fets ◽

P Type ◽

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(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

ECS Meeting Abstracts ◽

10.1149/ma2014-01/36/1372 ◽

2014 ◽

Keyword(s):

Interface Traps ◽

Transfer Characteristics ◽

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Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2274197 ◽

2013 ◽

Vol 60 (9) ◽

pp. 2802-2807 ◽

Author(s):

David Esseni ◽

Marco G. Pala

Keyword(s):

Comparative Analysis ◽

Interface Traps ◽

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Discrimination between volume and interface traps in C (V) and photo I(V) experiments on 10-30 nm MOS capacitors

Journal de Physique III ◽

10.1051/jp3:1993263 ◽

1993 ◽

Vol 3 (11) ◽

pp. 2101-2112

Author(s):

J. Peisner ◽

Y. Sangare ◽

G. Lévêque

Keyword(s):

Interface Traps ◽

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Calculation of lateral distribution of interface traps along MIS channel

Electronics Letters ◽

10.1049/el:19910906 ◽

1991 ◽

Vol 27 (16) ◽

pp. 1445 ◽

Author(s):

A.K. Henning ◽

J.A. Dimauro

Keyword(s):

Lateral Distribution ◽

Interface Traps

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