The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs

Author(s):  
Andreas Schenk ◽  
Saurabh Sant ◽  
Kirsten Moselund ◽  
Heike Riel
2015 ◽  
Vol 2015 ◽  
pp. 1-14
Author(s):  
Zhi Jiang ◽  
Yiqi Zhuang ◽  
Cong Li ◽  
Ping Wang ◽  
Yuqi Liu

We demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap. Donor-like and acceptor-like ITs have different mechanism of the turn-on characteristics. The flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitorCgdfor n-type TFETs with donor-like and acceptor-like ITs.


2016 ◽  
Vol 63 (11) ◽  
pp. 4240-4247 ◽  
Author(s):  
Saurabh Sant ◽  
Kirsten Moselund ◽  
Davide Cutaia ◽  
Heinz Schmid ◽  
Mattias Borg ◽  
...  

2021 ◽  
pp. 2100074
Author(s):  
Livia Janice Widiapradja ◽  
Taewook Nam ◽  
Yeonsu Jeong ◽  
Hye‐Jin Jin ◽  
Yangjin Lee ◽  
...  

2001 ◽  
Vol 4 (6) ◽  
pp. G47 ◽  
Author(s):  
Kow Ming Chang ◽  
Yuan Hung Chung ◽  
Tzyk Cheang Lee ◽  
Yong Long Sun

1996 ◽  
Vol 43 (7) ◽  
pp. 1144-1152 ◽  
Author(s):  
H.-H. Vuong ◽  
C.S. Rafferty ◽  
S.A. Eshraghi ◽  
J.L. Lentz ◽  
P.M. Zeitzoff ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document