The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.
In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater
