A Semantics for Hyperintensional Belief Revision Based on Information Bases

I propose a novel hyperintensional semantics for belief revision and a corresponding system of dynamic doxastic logic. The main goal of the framework is to reduce some of the idealisations that are common in the belief revision literature and in dynamic epistemic logic. The models of the new framework are primarily based on potentially incomplete or inconsistent collections of information, represented by situations in a situation space. I propose that by shifting the representational focus of doxastic models from belief sets to collections of information, and by defining changes of beliefs as artifacts of changes of information, we can achieve a more realistic account of belief representation and belief change. The proposed dynamic operation suggests a non-classical way of changing beliefs: belief revision occurs in non-explosive environments which allow for a non-monotonic and hyperintensional belief dynamics. A logic that is sound with respect to the semantics is also provided.

Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions

Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect transistors (GaN-FET) are studied by literature and related to measurement results. The measurements in extreme temperature conditions are far beyond the manufacturer-recommended operating range. Influences to parasitic elements in both static and dynamic operation of the GaN-FETs are investigated and related toward device losses in switch-mode power electronic circuits with the example of a half-bridge circuit. In this article, static operation investigation on the effect of temperature toward resistance, leakage currents, and reverse conduction is conducted. Dynamic operation between the two states of GaN-FET is also addressed and related to the potential impact in a switching circuit losses. A thermal chamber was built to precisely measure the effect of temperature toward parasitic elements in the devices using a curve tracer. It was found that the increment in RDSon, IDSS, IGSS, and VSD can be justified by the literature and verified by measurements. Incremental COSS and decreasing VGSth was found when exposing devices to extreme temperatures. These two parameters give real challenge over designing circuits at high temperature where timing is critical. Albeit temperature challenges, it is found that investigated GaN-FETs have potential to be used in extreme temperature-operating conditions.

Ammonius and Philoponus on the Activity of Syllogizing

According to Philoponus, the activity of drawing syllogisms is a dynamic operation. Following the classical idea that actions are specified by their objects and habitual powers by their actions, Philoponus concludes that only a dynamic power can elicit the act of syllogizing. This power is identified with discursive reasoning (dianoia). Imagination, on the contrary, is a static power, that cannot elicit that particular motion of drawing a syllogistic inference. The issue, however, is not entirely uncontroversial, because Ammonius maintains that sophistical syllogisms can only be formed by imagination, since they involve “empty concepts” as terms and only imagination can form such concepts. In this paper I will reconstruct Philoponus’ and Ammonius’ theories about the “activity” of syllogizing, and I shall explain how Philoponus can deal with sophistical syllogisms in a consistent way.