Effects of Parasitics on An Active Clamp Assisted Phase Shifted Full Bridge Converter Operation

Author(s):  
Manmohan Mahapatra ◽  
Anirban Pal ◽  
Kaushik Basu
Keyword(s):  
Energies ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 4160
Author(s):  
Xiaobin Li ◽  
Hongbo Ma ◽  
Junhong Yi ◽  
Song Lu ◽  
Jianping Xu

Compared with conventional forward converters, active clamp forward (ACF) converters have many advantages, including lower voltage stress on the primary power devices, the ability to switch at zero voltage, reduced EMI and duty cycle operation above 50%. Thus, it has been the most popular solution for the low bus voltage applications, such as 48 V and 28 V. However, because of the poor performance of Si MOSFETs, the efficiency of active clamp forward converters is difficult to further improved. Focusing on the bus voltage of 28 V with 18~36 V voltage range application, the Gallium Nitride high electron-mobility transistors (GaN HEMT) with ultralow on-resistance, low parasitic capacitances, and no reverse recovery, is incorporated into active clamp forward converters for achieving higher efficiency and power density, in this paper. Meanwhile, the comparative analysis is performed for Si MOSFET and GaN HEMT. In order to demonstrate the feasibility and validity of the proposed solution and comparative analysis, two 18~36 V input, 120 W/12 V output, synchronous rectification prototype with different power devices are built and compared in the lab. The experimental results show the GaN version can achieve the efficiency of 95.45%, which is around 1% higher than its counterpart under the whole load condition and the same power density of 2.2 W/cm3.


IEEE Access ◽  
2020 ◽  
pp. 1-1
Author(s):  
Keyu Cao ◽  
Xueshan Liu ◽  
Mingzhi He ◽  
Xin Meng ◽  
Qun Zhou

2021 ◽  
Vol 11 (2) ◽  
pp. 860
Author(s):  
Yeu-Torng Yau ◽  
Kuo-Ing Hwu ◽  
Yu-Kun Tai

An active clamp boost converter with blanking time auto-tuned is presented herein, and this is implemented by an additional auxiliary switch, an additional resonant inductor, and an additional active clamp capacitor as compared with the conventional boost converter. In this structure, both the main and auxiliary switches have zero voltage switching (ZVS) turn-on as well as the output diode has zero current switching (ZCS) turn-off, causing the overall efficiency of the converter to be upgraded. Moreover, as the active clamp circuit is adopted, the voltage spike on the main switch can be suppressed to some extent whereas, because of this structure, although the input inductor is designed in the continuous conduction mode (CCM), the output diode can operate with ZCS turn-off, leading to the resonant inductor operating in the discontinuous conduction mode (DCM), hence there is no reverse recovery current during the turn-off period of the output diode. Furthermore, unlike the existing soft switching circuits, the auto-tuning technique based on a given look-up table is added to adjust the cut-off time point of the auxiliary switch to reduce the current flowing through the output diode, so that the overall efficiency is upgraded further. In this paper, basic operating principles, mathematic deductions, potential designs, and some experimental results are given. To sum up, the novelty of this paper is ZCS turn-off of the output diode, DCM operation of the resonant inductor, and auto-tuning of cut-off time point of the auxiliary switch. In addition, the efficiency of the proposed converter can be up to 96.9%.


Author(s):  
Jing-Sheng Wong ◽  
Hung-Chia Wang ◽  
Chih-Wei Lin ◽  
Hao-Yu Xu ◽  
Yan-Ying Su ◽  
...  

2020 ◽  
Vol 67 (2) ◽  
pp. 1036-1047 ◽  
Author(s):  
Myung-Ho Kim ◽  
Seung-Hoon Lee ◽  
Bom-Seok Lee ◽  
Ji-Yeon Kim ◽  
Jae-Kuk Kim

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