Comment on "An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors"

1986 ◽  
Vol 7 (2) ◽  
pp. 142-142 ◽  
Author(s):  
H.B. Harrison ◽  
G.K. Reeves
Keyword(s):  
Accurate Method ◽  
Contact Resistivity ◽  
Cross Bridge ◽  
Specific Contact ◽  
Specific Contact Resistivity

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

1985 ◽  
Vol 6 (9) ◽  
pp. 441-443 ◽  
Author(s):  
W.M. Loh ◽  
S.E. Swirhun ◽  
E. Crabbe ◽  
K. Saraswat ◽  
R.M. Swanson
Keyword(s):  
Accurate Method ◽  
Contact Resistivity ◽  
Cross Bridge ◽  
Specific Contact ◽  
Specific Contact Resistivity

Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

2012 ◽  
Vol 51 (10R) ◽  
pp. 101302 ◽  
Author(s):  
Kazuya Ohuchi ◽  
Christian Lavoie ◽  
Bin Yang ◽  
Masaki Kondo ◽  
Kazuya Matsuzawa ◽  
...  
Keyword(s):  
Accurate Method ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity

Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application

2012 ◽  
Vol 51 ◽  
pp. 101302
Author(s):  
Kazuya Ohuchi ◽  
Christian Lavoie ◽  
Bin Yang ◽  
Masaki Kondo ◽  
Kazuya Matsuzawa ◽  
...  
Keyword(s):  
Accurate Method ◽  
Contact Resistivity ◽  
Specific Contact ◽  
Specific Contact Resistivity

A New Solution to the Ni-fill issue for Silicide-last Process

2013 ◽  
Vol 1559 ◽  
Author(s):  
Shu J. Mao ◽  
Li C. Zhao ◽  
Jun. Luo ◽  
Jiang. Yan
Keyword(s):  
Contact Resistance ◽  
Contact Resistivity ◽  
Advanced Technology ◽  
Si Substrates ◽  
Cross Bridge ◽  
Size Scaling ◽  
Specific Contact ◽  
Fresh Perspective ◽  
Specific Contact Resistivity ◽  
Contact Size

ABSTRACTMetal Nickel(Ni) fill becomes the challeng in integrating silicide-last process into CMOS advanced technology with further contact size scaling. In this work, the specific contact resistivity (ρc) of cold titanium(Ti)/Si was investigated by the cross-bridge Kelvin resistor(CBKR) method and compared with that of Ni(Pt)Si/Si. The cold Ti/n+-Si showed comparable contact resistance(ρc∼3x10-8Ω·cm2) to Ni(Pt)Si/ n+-Si, while a larger ρc(7.5x10-1Ω·cm2) for cold Ti formed on B+ doped Si substrates. The cold Ti/Si interface was also discussed. Our results furnish a fresh perspective on the solutions to the metal fill challeng for silicide-last process.

Sign in / Sign up

Export Citation Format

Share Document