Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da03 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA03

Author(s):

Kazuya Ohuchi ◽

Naoki Kusunoki ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Contact Resistivity ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Cross Bridge ◽

Specific Contact ◽

Specific Contact Resistivity ◽

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Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm Complementary Metal–Oxide–Semiconductor Technology and Beyond

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA03 ◽

Author(s):

Kazuya Ohuchi ◽

Naoki Kusunoki ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Contact Resistivity ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Cross Bridge ◽

Specific Contact ◽

Specific Contact Resistivity ◽

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Nonlinear modelling of dynamic self‐heating in 28 nm bulk complementary metal–oxide semiconductor technology

Electronics Letters ◽

10.1049/el.2015.0200 ◽

2015 ◽

Vol 51 (7) ◽

pp. 581-583

Author(s):

A.K. Sahoo ◽

S. Fregonese ◽

P. Scheer ◽

D. Celi ◽

A. Juge ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Nonlinear Modelling ◽

Self Heating ◽

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Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology

Electronics Letters ◽

10.1049/el.2014.3634 ◽

2015 ◽

Vol 51 (1) ◽

pp. 71-72

Author(s):

A.K. Sahoo ◽

S. Fregonese ◽

P. Scheer ◽

D. Celi ◽

A. Juge ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

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Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Semiconductor Technology ◽

Feedback Shift Register ◽

Power Application

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Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm CMOS technology and Beyond

10.7567/ssdm.2010.b-6-4 ◽

2010 ◽

Author(s):

K. Ohuchi ◽

N. Kusunoki ◽

F. Matsuoka

Keyword(s):

Cmos Technology ◽

Contact Resistivity ◽

Cross Bridge ◽

Specific Contact ◽

Specific Contact Resistivity ◽

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