Study of Thin Film Tin Oxide for Reliability as Gas Sensing Material

Author(s):  
Ravi Shankar ◽  
Tien Choy Loh ◽  
Le Khaing Le ◽  
Chun Wei Khor ◽  
Shian Yeu Kam ◽  
...  
YMER Digital ◽  
2021 ◽  
Vol 20 (12) ◽  
pp. 504-509
Author(s):  
C. K Nanhey ◽  
◽  
M. K Bhanarkar ◽  
B. M. Sargar ◽  
◽  
...  

Since many years, metal oxide semiconductor has paid too much interest as a gas sensing material by researchers because of wide performance. TiO2 is one of the majority crucial metal oxide which produced better performance in thin film development. Advanced spray pyrolysis system was used to develop thin film. The gas sensing characteristics TiO2 films are evaluated with responses. The gas sensing response, electrical characterization and sensitivity are corporate.


2017 ◽  
Vol 9 (2) ◽  
pp. 02019-1-02019-4 ◽  
Author(s):  
Sumanta Kumar Tripathy ◽  
◽  
T. N. V. Prabhakara Rao ◽  

2016 ◽  
Vol 659 ◽  
pp. 60-65 ◽  
Author(s):  
X. Zhao ◽  
W. Shi ◽  
H. Mu ◽  
H. Xie ◽  
F. Liu

2015 ◽  
Vol 220 ◽  
pp. 1354-1360 ◽  
Author(s):  
Jianqiao Liu ◽  
Xuesong Liu ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Qiuxuan Jiang ◽  
...  

2014 ◽  
Vol 981 ◽  
pp. 822-825
Author(s):  
Jia Bin Chen ◽  
Ping Yu ◽  
Yue Zhang ◽  
Yue Shan ◽  
Dong Xing Wang

Thin-film diode structure is MgAl/PbPc/Cu if lead phthalocyanine is taken as organic semiconductor gas-sensing material with methods such as vacuum thermal evaporation or magnetron sputtering. Use Keithley 4200 semiconductor instrument and Gas-sensing measurement system to analyze gas-sensing characteristic of Schottky diode device, the sensitive degree of NO2 with different density can be compared through theoretical analysis of measured current and voltage data. The measurement result shows: when the device is placed in 10ppm NO2 environment, after 74 minutes, forward current is decreased by 65 times, the corresponding MgAl/PbPc Schottky barrier height rises about 20meV. Reversed current of the device is 4 times larger because the increase of minority carrier electron number in PbPc thin-film is being absorbed by NO2.


1992 ◽  
Vol 69 (1-4) ◽  
pp. 697-700
Author(s):  
Jun-Jie Zhu ◽  
Shi-Ling Zang ◽  
Yun-Hong Zheng

2020 ◽  
Vol 698 ◽  
pp. 137845 ◽  
Author(s):  
Pil Gyu Choi ◽  
Naoto Shirahata ◽  
Yoshitake Masuda

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