Using CEMS method to study Sb-doped SnO2 thin film as reducing gas sensing material

Focus has been made on the determination of dielectric constant of thin dielectric layer (SnO2 thin film) using surface plasmon resonance (SPR) technique and exploiting it for the detection of NH3 gas. SnO2 thin film has been deposited by rf-sputtering technique on gold coated glass prism (BK-7) and its SPR response was measured in the Kretschmann configuration of attenuated total reflection using a p-polarised light beam at 633 nm wavelength. The SPR response of bilayer film was fitted with Fresnel’s equations in order to calculate the dielectric constant of SnO2 thin film. The air/SnO2/Au/prim system has been utilized for detecting varying concentration (500 ppm to 2000 ppm) of NH3 gas at room temperature using SPR technique. SPR curve shows significant shift in resonance angle from 44.8° to 56.7° on exposure of fixed concentration of NH3 gas (500 ppm to 2000 ppm) with very fast response and recovery speeds.

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Gas‐Sensing Properties of Th / SnO2 Thin‐Film Gas Sensor to Trimethylamine

Journal of The Electrochemical Society ◽

10.1149/1.1392510 ◽

1999 ◽

Vol 146 (9) ◽

pp. 3536-3537 ◽

Cited By ~ 28

Author(s):

P. H. Wei ◽

G. B. Li ◽

S. Y. Zhao ◽

L. R. Chen

Keyword(s):

Thin Film ◽

Gas Sensor ◽

Gas Sensing ◽

Sno2 Thin Film ◽

Sensing Properties ◽

Gas Sensing Properties

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Optimizing the gas sensing characteristics of Co-doped SnO2 thin film based hydrogen sensor

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.01.244 ◽

2019 ◽

Vol 785 ◽

pp. 819-825 ◽

Cited By ~ 19

Author(s):

Zili Zhang ◽

Chenbo Yin ◽

Liu Yang ◽

Jin Jiang ◽

Yu Guo

Keyword(s):

Thin Film ◽

Gas Sensing ◽

Hydrogen Sensor ◽

Sno2 Thin Film ◽

Sensing Characteristics ◽

Co Doped

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Respected Author, Your research paper has been published successfully. Please find the link below. http://ymerdigital.com/current-issue/ Please find the below DOI allocated to your article. 10.37896/YMER20.12/45 OR https://www.doi.org/10.37896/YMER20.12/45 Please find the below attached E- certificates Thanks.

YMER Digital ◽

10.37896/ymer20.12/47 ◽

2021 ◽

Vol 20 (12) ◽

pp. 504-509

Author(s):

C. K Nanhey ◽

◽

M. K Bhanarkar ◽

B. M. Sargar ◽

◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Current Issue ◽

Gas Sensing ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Sensing Material ◽

Film Development ◽

Sensing Characteristics

Since many years, metal oxide semiconductor has paid too much interest as a gas sensing material by researchers because of wide performance. TiO2 is one of the majority crucial metal oxide which produced better performance in thin film development. Advanced spray pyrolysis system was used to develop thin film. The gas sensing characteristics TiO2 films are evaluated with responses. The gas sensing response, electrical characterization and sensitivity are corporate.

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Size effect and comprehensive mathematical model for gas-sensing mechanism of SnO2 thin film gas sensors

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.162875 ◽

2021 ◽

pp. 162875

Author(s):

Jianqiao Liu ◽

Jiarong Lv ◽

Haomiao Xiong ◽

Yujia Wang ◽

Guohua Jin ◽

...

Keyword(s):

Thin Film ◽

Mathematical Model ◽

Size Effect ◽

Gas Sensors ◽

Gas Sensing ◽

Sno2 Thin Film ◽

Sensing Mechanism

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Preparation and Characterization of SnO2 Thin Film Gas Sensor for NOx Gas for Environmental Monitoring

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.223 ◽

2007 ◽

Vol 124-126 ◽

pp. 223-226 ◽

Cited By ~ 1

Author(s):

Md. Mosharaf Hossain Bhuiyan ◽

Tsuyoshi Ueda ◽

Tomoaki Ikegami

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Sno2 Thin Film ◽

Interdigitated Electrodes ◽

Undoped Sno2 ◽

Gas Sensing Properties ◽

Sno2 Thin Films ◽

Oxygen Gas

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

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Gas sensing characteristics of SnO2 thin film fabricated by thermal oxidation of a Sn/Pt double layer

Sensors and Actuators B Chemical ◽

10.1016/s0925-4005(01)00949-2 ◽

2002 ◽

Vol 81 (2-3) ◽

pp. 176-181 ◽

Cited By ~ 23

Author(s):

Chang-Hyun Shim ◽

Dae-Sik Lee ◽

Sook-I Hwang ◽

Myoung-Bok Lee ◽

Jeung-Soo Huh ◽

...

Keyword(s):

Thin Film ◽

Thermal Oxidation ◽

Double Layer ◽

Gas Sensing ◽

Sno2 Thin Film ◽

Sensing Characteristics

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MgAl/PbPc/Cu Organic Thin-Film Diode Preparation and Gas-Sensing Characteristics Analysis

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.981.822 ◽

2014 ◽

Vol 981 ◽

pp. 822-825

Author(s):

Jia Bin Chen ◽

Ping Yu ◽

Yue Zhang ◽

Yue Shan ◽

Dong Xing Wang

Keyword(s):

Thin Film ◽

Schottky Barrier Height ◽

Thermal Evaporation ◽

Minority Carrier ◽

Gas Sensing ◽

Organic Thin Film ◽

Sensing Material ◽

Characteristics Analysis ◽

Reversed Current ◽

Sensing Characteristics

Thin-film diode structure is MgAl/PbPc/Cu if lead phthalocyanine is taken as organic semiconductor gas-sensing material with methods such as vacuum thermal evaporation or magnetron sputtering. Use Keithley 4200 semiconductor instrument and Gas-sensing measurement system to analyze gas-sensing characteristic of Schottky diode device, the sensitive degree of NO2 with different density can be compared through theoretical analysis of measured current and voltage data. The measurement result shows: when the device is placed in 10ppm NO2 environment, after 74 minutes, forward current is decreased by 65 times, the corresponding MgAl/PbPc Schottky barrier height rises about 20meV. Reversed current of the device is 4 times larger because the increase of minority carrier electron number in PbPc thin-film is being absorbed by NO2.

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Effects of argon to oxygen ratio and post annealing on R.F. sputtered SnO2 thin film for ethylene gas detection

MRS Proceedings ◽

10.1557/opl.2011.21 ◽

2011 ◽

Vol 1292 ◽

Author(s):

Hosang Ahn ◽

Seon-Bae Kim ◽

Dong-Joo Kim

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Gas Detection ◽

Sno2 Thin Film ◽

Processing Conditions ◽

Film Property ◽

Sensor Applications ◽

Post Annealing ◽

Oxygen Ratio

ABSTRACTOptimum processing conditions for fabricating SnO2 thin films were investigated to detect low ppm levels of ethylene gas for future on-field gas sensor applications. Different argon-to-oxygen ratios during R.F. sputtering were attempted to find the optimum gas ratio in depositing SnO2 thin film. Post-annealing was performed at 650°C to investigate the influence of film property change on ethylene sensing property of sensor. As-deposited and post-annealed films prepared under four different argon-to-oxygen ratios were studied by SEM, XRD, and sensitivity measurement. It was found that the stoichiometry and crystallinity of SnO2 films determined by post annealing was more influential than those by the argon to oxygen ratio during R.F sputtering on ethylene gas detection. An ethylene gas-sensing mechanism on R.F. sputtered SnO2 thin films for the design of processing conditions is proposed.

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