A high-performance non-isolated DC-DC buck converter design based on wide bandgap power devices

2017 ◽  
Author(s):  
Ali M. S. Al-bayati ◽  
Salah S. Alharbi ◽  
Saleh S. Alharbi ◽  
Mustafa Al-badri ◽  
Mohammad Matin
Keyword(s):  
High Performance ◽  
Wide Bandgap ◽  
Buck Converter ◽  
Power Devices ◽  
Converter Design

WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS

2007 ◽  
Vol 17 (01) ◽  
pp. 3-9 ◽  
Author(s):  
M. Sugimoto ◽  
H. Ueda ◽  
T. Uesugi ◽  
T. kachi
Keyword(s):  
High Performance ◽  
Drain Current ◽  
Wide Bandgap ◽  
Hybrid Vehicles ◽  
High Current ◽  
Automotive Applications ◽  
Power Devices ◽  
Gan Hemt ◽  
Gan Hemts ◽  
Current Operation

In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size inverters for future automobiles.

2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

New insights on multiphase synchronous buck converter design: A comprehensive consideration

2013 ◽  
Author(s):  
Kejiu Zhang ◽  
Shiguo Luo ◽  
Lisa Li ◽  
Thomas X. Wu ◽  
Issa Batarseh
Keyword(s):  
Buck Converter ◽  
Converter Design

scholarly journals The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 631
Author(s):  
Wei-Lun Huang ◽  
Sheng-Po Chang ◽  
Cheng-Hao Li ◽  
Shoou-Jinn Chang
Keyword(s):  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Wide Bandgap ◽  
Visible Light Region ◽  
Current Ratio ◽  
Rejection Ratio ◽  
Light Region ◽  
Sputtering Power ◽  
Solar Blind

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.

Augmented Buck Converter Design using Resonant Circuits for Fast Transient Recovery

2016 ◽  
Vol 31 (8) ◽  
pp. 5666-5679 ◽  
Author(s):  
Zhenyu Shan ◽  
Siew-Chong Tan ◽  
Chi K. Tse ◽  
Juri Jatskevich
Keyword(s):  
Buck Converter ◽  
Converter Design ◽  
Fast Transient
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