First Principles Calculation of Band Structure and Physical Properties of Ferroelectric (NH4)2BeF4 Crystal

Author(s):  
Myron Rudysh ◽  
Bohdan Horon ◽  
Pavlo Shchepanskyi ◽  
Vasyl Stadnyk ◽  
Ruslan Brezvin
2020 ◽  
Vol 8 (2) ◽  
pp. 581-590 ◽  
Author(s):  
C. Y. Wu ◽  
L. Sun ◽  
J. C. Han ◽  
H. R. Gong

First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the band structures, phonon spectra, and thermoelectric properties of both β-BiSb and β-BiAs monolayers.


2011 ◽  
Vol 99 (1) ◽  
pp. 012103 ◽  
Author(s):  
S. W. Chen ◽  
S. C. Huang ◽  
G. Y. Guo ◽  
J. M. Lee ◽  
S. Chiang ◽  
...  

1980 ◽  
Vol 45 (4) ◽  
pp. 276-279 ◽  
Author(s):  
H. J. Schellnhuber ◽  
G. M. Obermair

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wujisiguleng Bao ◽  
Masaya Ichimura

The influence of secondary phases of ZnS and Cu2SnS3(CTS) in Cu2ZnSnS4(CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure calculation. The ZnS/CZTS heterointerface is of type I and since ZnS has a larger band gap than that of CZTS, the ZnS phase in CZTS is predicted to be resistive barriers for carriers. The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. Therefore, the CTS phase will act as a recombination site in CZTS.


2019 ◽  
Vol 13 (1) ◽  
pp. 015501
Author(s):  
Yongmei Zhang ◽  
Dong Liu ◽  
Yindong Shi ◽  
Ziyi Sun ◽  
Li Wu ◽  
...  

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