A converter control field bus protocol for power electronic systems with a synchronization accuracy of ±5ns

2015 ◽  
Author(s):  
Christoph Carstensen ◽  
Rolf Christen ◽  
Hannes Vollenweider ◽  
Roger Stark ◽  
Jurgen Biela
Keyword(s):  
Electronic Systems ◽  
Power Electronic ◽  
Field Bus ◽  
Control Field ◽  
Synchronization Accuracy

Simulation of Power Electronic Systems

2002 ◽  
Vol 122 (8) ◽  
pp. 775-780
Author(s):  
Yasuaki Kuroe ◽  
Mikihiko Matsui
Keyword(s):  
Electronic Systems ◽  
Power Electronic

Low-Cost High-Speed Techniques for Real-Time Simulation of Power Electronic Systems

2007 ◽  
Author(s):  
R. E. Crosbie ◽  
J. J. Zenor ◽  
R. Bednar ◽  
D. Word ◽  
N. G. Hingorani
Keyword(s):  
Real Time ◽  
High Speed ◽  
Low Cost ◽  
Electronic Systems ◽  
Power Electronic ◽  
Real Time Simulation ◽  
Time Simulation

Active cancellation of periodic EMI of power electronic systems by injecting artificially synthesized signals

2020 ◽  
Vol 9 (3) ◽  
pp. 63-72
Author(s):  
Andreas Bendicks ◽  
Tobias Dorlemann ◽  
Timo Osterburg ◽  
Stephan Frei
Keyword(s):  
Electronic Systems ◽  
Power Electronic ◽  
Active Cancellation

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

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