Qualification of low cost triple junction GaInP/GaAs/Ge solar cell assemblies with external bypass diode connected by insulated cell P/diode N interconnects

Author(s):  
Giuseppe Gabetta ◽  
Davide Cospito ◽  
Roberta Campesato ◽  
Mariacristina Casale ◽  
Emilio Fernandez Lisbona
2019 ◽  
Vol 28 (4) ◽  
pp. 251-265 ◽  
Author(s):  
Lin Zhu ◽  
Yuji Hazama ◽  
Anurag Reddy ◽  
Kentaroh Watanabe ◽  
Yoshiaki Nakano ◽  
...  

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.


2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Hsi-Chien Liu ◽  
Gou-Jen Wang

The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.


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