Modeling and design for low‐cost multijunction solar cell via light‐trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction

2019 ◽  
Vol 28 (4) ◽  
pp. 251-265 ◽  
Author(s):  
Lin Zhu ◽  
Yuji Hazama ◽  
Anurag Reddy ◽  
Kentaroh Watanabe ◽  
Yoshiaki Nakano ◽  
...  
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Low Cost ◽  
Light Trapping ◽  
Multijunction Solar Cell

Qualification of low cost triple junction GaInP/GaAs/Ge solar cell assemblies with external bypass diode connected by insulated cell P/diode N interconnects

2019 ◽  
Author(s):  
Giuseppe Gabetta ◽  
Davide Cospito ◽  
Roberta Campesato ◽  
Mariacristina Casale ◽  
Emilio Fernandez Lisbona
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Low Cost ◽  
Cell Assemblies ◽  
Bypass Diode

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

Novel multijunction solar cell design for low cost, high concentration systems

2015 ◽  
Vol 24 (2) ◽  
pp. 150-158 ◽  
Author(s):  
Bernard Paquette ◽  
Abderraouf Boucherif ◽  
Vincent Aimez ◽  
Richard Arès
Keyword(s):  
Solar Cell ◽  
Low Cost ◽  
Cell Design ◽  
High Concentration ◽  
Multijunction Solar Cell

scholarly journals The efficiency of the single junction and multijunction InxGa1-xN solar cell using AMPS-1D simulator

2013 ◽  
Vol 37 (1) ◽  
pp. 65-72
Author(s):  
Md Fazlul Huq ◽  
Zamshed Iqbal Chowdhury ◽  
Mehedhi Hasan ◽  
Zahid Hasan Mahmood
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
Triple Junctions ◽  
Single Junction ◽  
Single Junction Solar Cell ◽  
Multijunction Solar Cell ◽  
Academy Of Sciences

Transparency loss and excess excitation loss are responsible for relatively lower conversion efficiency of single junction solar cell. One way to reduce these two losses is to use multijunction solar cell. In this research InxGa1-xN based single, double and triple junction solar cells were simulated employing AMPS-1D simulator. The band gap of each layer depends on the composition percentage of InN and GaN within InxGa1-xN. In this simulation the authors found 24.51, 33.89, and 42.12% efficiencies for single, double and triple junctions, respectively. DOI: http://dx.doi.org/10.3329/jbas.v37i1.15682 Journal of Bangladesh Academy of Sciences, Vol. 37, No. 1, 65-72, 2013

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

Optimal Design and Photoelectric Performance Study of Micro-lens Light Trapping Structure for CIGS Thin Film Solar Cell in BIPV

2021 ◽  
Author(s):  
Li Zhu ◽  
Jiqiang Zhang ◽  
Di Wang ◽  
Ruohong Wang ◽  
Yong Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Optimal Design ◽  
Thin Film Solar Cell ◽  
Light Trapping ◽  
Performance Study ◽  
Cigs Thin Film ◽  
Photoelectric Performance ◽  
Micro Lens

scholarly journals Wireless photoelectrochemical water splitting using triple-junction solar cell protected by TiO2

2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff
Keyword(s):  
Solar Cell ◽  
Water Splitting ◽  
Triple Junction ◽  
Photoelectrochemical Water Splitting ◽  
Junction Solar Cell

scholarly journals 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Low Cost ◽  
Light Trapping ◽  
Incident Light ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Planar Silicon ◽  
Shortwave Infrared

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

1 MeV electron and 10 MeV proton irradiation effects on inverted metamorphic GaInP/GaAs/InGaAs triple junction solar cell

2021 ◽  
Vol 224 ◽  
pp. 111022
Author(s):  
J. Li ◽  
A. Aierken ◽  
Y. Zhuang ◽  
P.Q. Xu ◽  
H.Q. Wu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Triple Junction ◽  
Proton Irradiation ◽  
Irradiation Effects ◽  
Junction Solar Cell
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