Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546623 ◽

2005 ◽

Author(s):

G. Mugnaini ◽

G. Iannaccone

Keyword(s):

Analytical Model ◽

Ballistic Transport ◽

Nanotube Transistors

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Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035045 ◽

2011 ◽

Author(s):

J. Dura ◽

S. Martinie ◽

D. Munteanu ◽

F. Triozon ◽

S. Barraud ◽

...

Keyword(s):

Band Structure ◽

Analytical Model ◽

Quantum Confinement ◽

Ballistic Transport ◽

Drain Current ◽

Nanowire Mosfets ◽

Transport Device

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Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering

Journal of Computational Electronics ◽

10.1007/s10825-021-01667-x ◽

2021 ◽

Author(s):

Sandeep Semwal ◽

Sonal Agrawal ◽

Anurag Srivastava ◽

Gaurav Kaushal

Keyword(s):

Analytical Model ◽

Ballistic Transport

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New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport

IEEE Electron Device Letters ◽

10.1109/led.2008.2007305 ◽

2008 ◽

Vol 29 (12) ◽

pp. 1392-1394 ◽

Author(s):

SÉbastien Martinie ◽

Daniela Munteanu ◽

Gilles Le Carval ◽

Jean-Luc Autran

Keyword(s):

Analytical Model ◽

Ballistic Transport ◽

Field Conditions ◽

Backscattering Coefficient

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An analytical model for conflict dynamics

Journal of the Operational Research Society ◽

10.1038/sj.jors.2600396 ◽

1997 ◽

Vol 48 (10) ◽

pp. 978-987

Author(s):

N Gass

Keyword(s):

Analytical Model

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Simple quasi-two-dimensional analytical model to characterise the electric field in an LDD MOSFET

IEE Proceedings G Circuits Devices and Systems ◽

10.1049/ip-g-2.1990.0044 ◽

1990 ◽

Vol 137 (4) ◽

pp. 291

Author(s):

R.H. Patel ◽

D.-L. Kwong ◽

N. Herr

Keyword(s):

Electric Field ◽

Analytical Model ◽

Two Dimensional

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ANALYTICAL MODEL OF SUPEREXCHANGE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19888414 ◽

1988 ◽

Vol 49 (C8) ◽

pp. C8-911-C8-912

Author(s):

Yu. V. Rakitin ◽

V. T. Kalinnikov

Keyword(s):

Analytical Model

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Long-range ballistic transport mechanisms in superconducting spintronics

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.2016.02.037769 ◽

2016 ◽

Vol 186 (6) ◽

pp. 640-646

Author(s):

Alexei V. Samokhvalov ◽

Alexander S. Mel'nikov ◽

Alexander I. Buzdin

Keyword(s):

Ballistic Transport ◽

Transport Mechanisms

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Analytical Model for Determining the Effective Size of an Evaporation Region in Pulsed Laser Ablation

Прикладная механика и техническая физика ◽

10.15372/pmtf20180509 ◽

2018 ◽

Keyword(s):

Laser Ablation ◽

Analytical Model ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Effective Size ◽

Evaporation Region

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Coding Algorithm for Grayscale Images – Design of Piecewise Uniform Quantizer with Golomb–Rice Code and Novel Analytical Model for Performance Analysis

Informatica ◽

10.15388/informatica.2017.152 ◽

2017 ◽

Vol 28 (4) ◽

pp. 703-724 ◽

Author(s):

Nikola Simić ◽

Zoran H. Perić ◽

Milan S. Savić

Keyword(s):

Performance Analysis ◽

Analytical Model ◽

Grayscale Images

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High Performance Printed Aligned Carbon Nanotube Transistors on Both Rigid and Flexible Substrates for Transparent Electronics

10.1557/proc-1144-ll06-04 ◽

2008 ◽

Author(s):

Chongwu Zhou ◽

Hsiao-Kang Chang ◽

Fumiaki Ishikawa ◽

Koungmin Ryu ◽

Pochiang Chen ◽

...

Keyword(s):

Carbon Nanotube ◽

High Performance ◽

Flexible Substrates ◽

Transparent Electronics ◽

Carbon Nanotube Transistors ◽

Nanotube Transistors

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