A Tuneable Metal Gate Work Function Using Solid State Diffusion of Nitrogen

2002 ◽  
Author(s):  
R. Lander ◽  
J. Hooker ◽  
J. van Zijl ◽  
F. Roozeboom ◽  
M. Maas ◽  
...  
Keyword(s):  
Solid State ◽  
Work Function ◽  
Solid State Diffusion ◽  
Metal Gate ◽  
State Diffusion ◽  
Gate Work Function

Control of a Metal-Electrode Work Function by Solid-State Diffusion of Nitrogen

2002 ◽  
Vol 716 ◽  
Author(s):  
R.J.P. Lander ◽  
J.C. Hooker ◽  
J.P. van Zijl ◽  
F. Roozeboom ◽  
M.P.M. Maas ◽  
...  
Keyword(s):  
Solid State ◽  
Work Function ◽  
Metal Electrode ◽  
Solid State Diffusion ◽  
Metal Gate ◽  
Covering Layer ◽  
Metal Gates ◽  
State Diffusion ◽  
Capacitance Voltage ◽  
C 30

AbstractThe work function of a metal gate electrode has been adjusted with the introduction of nitrogen by solid-source diffusion from an over-stoichiometric TiN1+x layer. RBS measurements have shown that measurable concentrations of nitrogen can be diffused into a 10nm Ta layer at moderate anneal temperatures (>500°C), and that this concentration increases with temperature in the range 500-1000°C. Capacitance-voltage measurements have been carried out on 10nm tantalum layers on Al2O3. These measurements have indicated that the work function of tantalum changes by -0.08eV due to the presence of the over-stoichiometric TiN1+x covering layer during anneal (800°C/30”). Similar C-V measurements have been carried out on 10nm molybdenum layers on SiO2 and on Al2O3 dielectrics. These have shown that the work function of molybdenum is substantially different for metal stacks with the TiN1+x covering layer after a similar anneal. The work function changes by -0.52eV for molybdenum on SiO2 and by -1.1eV for molybdenum on Al2O3. The results suggest great potential for molybdenum as a candidate for a single-metal dual-work function approach to integrating metal gates into future CMOS technologies.

Formation of AlCuFe quasicrystalline thin films by solid state diffusion

1994 ◽  
Vol 64 (4) ◽  
pp. 431-433 ◽  
Author(s):  
T. Klein ◽  
O. G. Symko
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Diffusion ◽  
State Diffusion

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Investigation of the diffusion behavior in Sn-xAg-yCu/Cu solid state diffusion couples

2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans
Keyword(s):  
Solid State ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
Diffusion Behavior ◽  
State Diffusion

Amorphous phase formation in Ti/Ni bilayer thin films by solid-state diffusion

1989 ◽  
Vol 8 (12) ◽  
pp. 1393-1394 ◽  
Author(s):  
Masahiro Kitada ◽  
Noboru Shimizu ◽  
Teruho Shimotsu
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Solid State Diffusion ◽  
State Diffusion ◽  
Amorphous Phase Formation
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