Mechanisms of Dopant Redistribution and Retention in Silicon Following Ultra-low Energy Boron Implantation and Excimer Laser Annealing

2002 ◽  
Author(s):  
L. Mariucci ◽  
G. Fortunato ◽  
S. Whelan ◽  
V. Privitera ◽  
G. Mannino
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
Boron Implantation ◽  
Dopant Redistribution

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

2003 ◽  
Vol 765 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
V. Privitera ◽  
A. La Magna ◽  
S. Whelan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Pulses ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
High Resolution Tem ◽  
Ultra Shallow Junctions ◽  
Dopant Redistribution ◽  
Melt Duration

AbstractFormation of ultra-shallow junctions by excimer laser annealing (ELA) of ultra-low energy (1keV –250 eV) B implanted in Si has been investigated. High resolution TEM has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been studied as a function of the laser energy density (melt depth), the implant dose and the number of laser pulses (melt duration). Under appropriate ELA conditions, ultra-shallow profiles, extending to a depth as low as 35 nm with an abrupt profile (2.5 nm/dec), have been achieved. A significant amount of the implanted dopant was lost from the sample following ELA. However, the dopant that was retained in crystal material was fully activated following rapid re-solidification. We developed a theoretical model, that considers the dopant redistribution during melting and regrowth, showing that the fraction of the implanted dopant not activated during ELA was lost from the sample through out diffusion. The lateral distribution of the implanted B following laser annealing has been studied with 2-D measurements, using selective etching and cross-section TEM on samples where the implanted dopant was confined by using test structures including windows opened in silicon dioxide masks and patterned gate stack structures.

Ultrashallow p[sup +]∕n Junction Prepared by Low Energy BF[sub 3] Plasma Doping and KrF Excimer Laser Annealing

2006 ◽  
Vol 9 (1) ◽  
pp. G19 ◽  
Author(s):  
Dongkyu Lee ◽  
Sungkweon Baek ◽  
Sungho Heo ◽  
Changhee Cho ◽  
Gyoungho Buh ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
Plasma Doping ◽  
Krf Excimer Laser

Ultra-Shallow p+/n Junction Prepared by Low Energy BF3 Plasma Doping(PLAD) and KrF Excimer Laser Annealing

2005 ◽  
Author(s):  
Dongkyu Lee ◽  
Sungkweon Baek ◽  
Changhee Cho ◽  
Sungho Heo ◽  
Hyunsang Hwang
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
Plasma Doping ◽  
Krf Excimer Laser

Intensity-Modulated Excimer Laser Annealing to Obtain (001) Surface-Oriented Poly-Si Films on Glass: Molecular Dynamics Study

2008 ◽  
Author(s):  
Norie Matsubara ◽  
Tomohiko Ogata ◽  
Takanori Mitani ◽  
Shinji Munetoh ◽  
Teruaki Motooka
Keyword(s):  
Molecular Dynamics ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Intensity Modulated ◽  
Si Films

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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