EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region

2015 45th European Solid State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2015.7324731 ◽

2015 ◽

Author(s):

Antoine Litty ◽

Sylvie Ortolland ◽

Dominique Golanski ◽

Christian Dutto ◽

Sorin Cristoloveanu

Keyword(s):

Drift Region ◽

Effect Of Doping

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Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region

Current Applied Physics ◽

10.1016/j.cap.2007.10.086 ◽

2009 ◽

Vol 9 (1) ◽

pp. 9-12 ◽

Author(s):

Kee-Yeol Na ◽

Yeong-Seuk Kim

Keyword(s):

Metal Oxide ◽

High Performance ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Region ◽

Shallow Trench Isolation ◽

Trench Isolation

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Effect of doping on the opto-electronic properties of hollow spheroid ZnO quantum dots: A theoretical study

Materials Science and Engineering B ◽

10.1016/j.mseb.2021.115220 ◽

2021 ◽

Vol 270 ◽

pp. 115220

Author(s):

Sankarasubramanian Gopalakrishnan ◽

Ramasamy Shankar ◽

Ponmalai Kolandaivel

Keyword(s):

Quantum Dots ◽

Electronic Properties ◽

Theoretical Study ◽

Zno Quantum Dots ◽

Effect Of Doping

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ESD-Immunity Influence of Ultra-high Voltage nLDMOS as the Drift Region Embedded a P-well

2019 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE) ◽

10.1109/ecice47484.2019.8942662 ◽

2019 ◽

Author(s):

Po-Lin Lin ◽

Shen-Li Chen ◽

Sheng-Kai Fan ◽

Yu-Jie Zhou ◽

Tien-Yu Lan ◽

...

Keyword(s):

High Voltage ◽

Drift Region ◽

Ultra High Voltage

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Effect of doping Cr on NH3 adsorption and NO oxidation over the FexOy/AC surface: a DFT-D study

Journal of Hazardous Materials ◽

10.1016/j.jhazmat.2021.125798 ◽

2021 ◽

pp. 125798

Author(s):

Chaoyue Xie ◽

Baozhong Zhu ◽

Yunlan Sun ◽

Weiyi Song ◽

Minggao Xu

Keyword(s):

No Oxidation ◽

Nh3 Adsorption ◽

Effect Of Doping

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Multi-scale two-domain numerical modeling of stationary positive DC corona discharge/drift-region coupling

Journal of Computational Physics ◽

10.1016/j.jcp.2021.110517 ◽

2021 ◽

pp. 110517

Author(s):

Nicolas Monrolin ◽

Franck Plouraboué

Keyword(s):

Numerical Modeling ◽

Corona Discharge ◽

Drift Region ◽

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Effect of doping concentration and heat treatment on the refrigerant capacity of Pr0.63Dy0.37-xSrxMnO3

Current Applied Physics ◽

10.1016/j.cap.2021.04.021 ◽

2021 ◽

Author(s):

Riheb Hamdi ◽

Yousef Haik ◽

Saleh S. Hayek ◽

Ayman Samara ◽

Said A. Mansour

Keyword(s):

Heat Treatment ◽

Doping Concentration ◽

Refrigerant Capacity ◽

Effect Of Doping

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The effect of doping on the degradation of GaAs-AlxGa1-xAs injection lasers

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1974.1068491 ◽

1974 ◽

Vol 10 (9) ◽

pp. 710-710

Author(s):

P. McMullin ◽

J. Blum ◽

K. Shih ◽

A. Smith ◽

G. Woolhouse

Keyword(s):

Injection Lasers ◽

Effect Of Doping

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Radiation Effect on a High Efficiency Double Drift Region 4H-SiC Terahertz IMPATT Diode

2007 International Conference on Microwave and Millimeter Wave Technology ◽

10.1109/icmmt.2007.381459 ◽

2007 ◽

Author(s):

M. Mukherjee ◽

N. Mazumder ◽

A. Dasgupta

Keyword(s):

Radiation Effect ◽

High Efficiency ◽

Drift Region ◽

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CO-sensing properties of In/sub 2/O/sub 3/-doped SnO/sub 2/ thick-film sensors: effect of doping concentration and grain size

IEEE Sensors Journal ◽

10.1109/jsen.2005.854485 ◽

2005 ◽

Vol 5 (5) ◽

pp. 817-824 ◽

Author(s):

Z.A. Ansari ◽

T.G. Ko ◽

Jae-Hee Oh

Keyword(s):

Doping Concentration ◽

Sensing Properties ◽

Effect Of Doping

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Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures

Applied Physics Letters ◽

10.1063/1.105760 ◽

1991 ◽

Vol 59 (24) ◽

pp. 3127-3129 ◽

Author(s):

E. C. Paloura ◽

A. Ginoudi ◽

G. Kiriakidis ◽

A. Christou

Keyword(s):

Molecular Beam ◽

Electron Traps ◽

Molecular Beam Epitaxial ◽

Effect Of Doping

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