Fabricating high performance n-channel lateral double diffused metal–oxide–semiconductor transistors utilizing the shallow trench isolation as a salicide blocking mask of the drift region
2002 ◽
Vol 20
(3)
◽
pp. 918
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2011 ◽
Vol 50
(4S)
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pp. 04DC21
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2001 ◽
Vol 40
(Part 1, No. 2A)
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pp. 462-466
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2010 ◽
Vol 28
(2)
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pp. 391-397
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2001 ◽
Vol 4
(11)
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pp. G88
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1997 ◽
Vol 15
(6)
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pp. 1936
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1999 ◽
Vol 38
(Part 1, No. 4B)
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pp. 2232-2237
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2011 ◽
Vol 50
(4)
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pp. 04DC21
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