ABSTRACTUsing deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 700, 800 and 900 °C for 6s under a SiO2 cap and a capless condition. It is found that during RTP the electron traps with the thermal activation energies of 0.89 and 0.99 eV are produced in Al0.lGa0.9As and Al0.3Ga0.7As, respectively. The thermal activation energies of these traps are close to the reported ones for the trap EL2 in AlxGaM1−xAs. Therefore, these traps are probably related to the trap EL2. In the RTP samples under a capless condition, the concentrations of the trap EL2 in AlxGa1−xAs (x=0.1, 0.3) decreases from the surface to the deeper position in MBE layers, while the depth profile of the trap EL2 in GaAs is flat. It is suggested that the origin of the trap EL2 formation in AlxGa1−xAs is different from one in GaAs.
