Schematic protection method from influence of total ionization dose effects on threshold voltage of MOS transistors

Author(s):  
Vazgen Melikyan ◽  
Aristakes Hovsepyan ◽  
Tigran Harutyunyan
Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.


1971 ◽  
Vol 18 (6) ◽  
pp. 386-388 ◽  
Author(s):  
R. Wang ◽  
J. Dunkley ◽  
T.A. DeMassa ◽  
L.F. Jelsma

1974 ◽  
Vol 21 (12) ◽  
pp. 778-784 ◽  
Author(s):  
M.D. Pocha ◽  
A.G. Gonzalez ◽  
R.W. Dutton

2014 ◽  
Vol 35 (6) ◽  
pp. 064007 ◽  
Author(s):  
Yuxin Wang ◽  
Rongbin Hu ◽  
Ruzhang Li ◽  
Guangbing Chen ◽  
Dongbing Fu ◽  
...  

2020 ◽  
Vol 15 (04) ◽  
pp. C04026-C04026
Author(s):  
L. Song ◽  
Y. Lu ◽  
T. Miyoshi ◽  
I. Kurachi ◽  
R. Nishimura ◽  
...  

2007 ◽  
Vol 555 ◽  
pp. 147-152 ◽  
Author(s):  
M. Odalović ◽  
D. Petković

The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.


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