Fractal frequency selective surface based band stop filters for X-band and Ku-band applications

Author(s):  
Sarika ◽  
Rajesh Kumar ◽  
Malay Ranjan Tripathy ◽  
Daniel Ronnow
Author(s):  
Durai Kanchana ◽  
Sankararajan Radha ◽  
Balakrishnapillai Suseela Sreeja ◽  
Esakkimuthu Manikandan

Abstract In this paper, a novel miniaturized and flexible dual band frequency selective surface (FSS) is presented. This FSS provides effective shielding in X-band and Ku- band, with a frequency response of 9.4 and 16.7 GHz, respectively. The proposed FSS provides 924 MHz bandwidth at X-band and 1.34 GHz bandwidth at Ku-band with an insertion loss of 20 dB. Moreover, the proposed design is polarization-independent and it provides stable frequency response at various angles of incidences for both transverse electric and transverse magnetic modes. More significantly, the proposed FSS analyzed the bandstop response of the selective frequency and also is suitable for conformal applications. A prototype of the proposed FSS is fabricated. The measured results and simulated results are good in agreement.


2018 ◽  
Vol 81 ◽  
pp. 151-159 ◽  
Author(s):  
Sarika ◽  
Malay Ranjan Tripathy ◽  
Daniel Ronnow

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 476
Author(s):  
Umer Farooq ◽  
Adnan Iftikhar ◽  
Muhammad Farhan Shafique ◽  
Muhammad Saeed Khan ◽  
Adnan Fida ◽  
...  

This paper presents a highly compact frequency-selective surface (FSS) that has the potential to switch between the X-band (8 GHz–12 GHz) and C-band (4 GHz–8 GHz) for RF shielding applications. The proposed FSS is composed of a square conducting loop with inward-extended arms loaded with curved extensions. The symmetric geometry allows the RF shield to perform equally for transverse electric (TE), transverse magnetic (TM), and 45° polarizations. The unit cell has a dimension of 0.176 λ0 and has excellent angular stability up to 60°. The resonance mechanism was investigated using equivalent circuit models of the shield. The design of the unit element allowed incorporation of PIN diodes between adjacent elements for switching to a lower C-band spectrum at 6.6 GHz. The biasing network is on the bottom layer of the substrate to avoid effects on the shielding performance. A PIN diode configuration for the switching operation was also proposed. In simulations, the PIN diode model was incorporated to observe the switchable operation. Two prototypes were fabricated, and the switchable operation was demonstrated by etching copper strips on one fabricated prototype between adjacent unit cells (in lieu of PIN diodes) as a proof of the design prototypes. Comparisons among the results confirmed that the design offers high angular stability and excellent performance in both bands.


2016 ◽  
Vol 13 (16) ◽  
pp. 20160567-20160567 ◽  
Author(s):  
In-Gon Lee ◽  
Yoon-Jae Kim ◽  
Yong-Bae Park ◽  
Heung-Jae Chun ◽  
Ic-Pyo Hong

Author(s):  
Muhammad Bilal ◽  
Rashid Saleem ◽  
Faisal Ahmad Khan ◽  
Asim Quddus ◽  
Muhammad Farhan Shafique

Sign in / Sign up

Export Citation Format

Share Document