Gate-voltage Controlled Tunneling Magnetoresistance in a Magnetic Tunneling Junction with an Inserted Thin Metallic Layer

2016 International Conference of Asian Union of Magnetics Societies (ICAUMS) ◽

10.1109/icaums.2016.8479937 ◽

2016 ◽

Author(s):

Sui-Pin Chen

Keyword(s):

Gate Voltage ◽

Metallic Layer ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Study on tunneling magnetoresistance effects in parabolic well magnetic tunneling junction with double barriers

Acta Physica Sinica ◽

10.7498/aps.65.157301 ◽

2016 ◽

Vol 65 (15) ◽

pp. 157301

Author(s):

Huang Zheng ◽

Long Chao-Yun ◽

Zhou Xun ◽

Xu Ming

Keyword(s):

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Bias-voltage controlled resistance in a magnetic tunneling junction with an inserted thin metallic layer

Thin Solid Films ◽

10.1016/j.tsf.2013.04.011 ◽

2013 ◽

Vol 537 ◽

pp. 198-201 ◽

Author(s):

Sui-Pin Chen

Keyword(s):

Bias Voltage ◽

Metallic Layer ◽

Tunneling Junction ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2free layerex-situannealed at 400 °C

Nanotechnology ◽

10.1088/0957-4484/27/48/485203 ◽

2016 ◽

Vol 27 (48) ◽

pp. 485203 ◽

Author(s):

Yasutaka Takemura ◽

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Jea-Gun Park

Keyword(s):

Layer Thickness ◽

Spin Valves ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling ◽

Seed Layer Thickness

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Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

Scientific Reports ◽

10.1038/srep38125 ◽

2016 ◽

Vol 6 (1) ◽

Author(s):

Du-Yeong Lee ◽

Song-Hwa Hong ◽

Seung-Eun Lee ◽

Jea-Gun Park

Keyword(s):

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Spacer Thickness ◽

Magnetic Tunneling

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Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

Nanoscale Research Letters ◽

10.1186/s11671-016-1637-9 ◽

2016 ◽

Vol 11 (1) ◽

Author(s):

Du-Yeong Lee ◽

Seung-Eun Lee ◽

Tae-Hun Shim ◽

Jea-Gun Park

Keyword(s):

Layer Structure ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Magnetoresistance Ratio ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

Journal of Applied Physics ◽

10.1063/1.2177567 ◽

2006 ◽

Vol 99 (8) ◽

pp. 08R705 ◽

Author(s):

Min-Fong Shu ◽

A. Canizo-Cabrera ◽

Chih-Cheng Hsu ◽

C. C. Chen ◽

J. C. Wu ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Bias Voltage ◽

Tunneling Magnetoresistance ◽

Tunneling Junction ◽

Force Microscopy ◽

Atomic Force ◽

Dc Bias ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Journal of Applied Physics ◽

10.1063/1.3563096 ◽

2011 ◽

Vol 109 (7) ◽

pp. 07C731 ◽

Author(s):

Lubna R. Shah ◽

Nupur Bhargava ◽

Sangcheol Kim ◽

Ryan Stearrett ◽

Xiaoming Kou ◽

...

Keyword(s):

Magnetic Field ◽

Layer Thickness ◽

Shape Anisotropy ◽

Tunneling Junction ◽

Magnetic Field Sensors ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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A reconfigurable computing architecture using magnetic tunneling junction memories

2013 23rd International Conference on Field programmable Logic and Applications ◽

10.1109/fpl.2013.6645616 ◽

2013 ◽

Author(s):

Victor Silva ◽

Jorge Fernandes ◽

Mario Vestias ◽

Horacio Neto

Keyword(s):

Reconfigurable Computing ◽

Tunneling Junction ◽

Computing Architecture ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2761877 ◽

2017 ◽

Vol 64 (12) ◽

pp. 4919-4927 ◽

Author(s):

Lang Zeng ◽

Tianqi Gao ◽

Deming Zhang ◽

Shouzhong Peng ◽

Lezhi Wang ◽

...

Keyword(s):

Magnetic Anisotropy ◽

Memory Cell ◽

Negative Capacitance ◽

Tunneling Junction ◽

Anisotropy Effect ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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Design of Perpendicular Magnetic-Tunneling-Junction Spin-Valve Including [Co/Pt]n Free Layer As Bulk Perpendicular Magnetic Anisotropy

ECS Meeting Abstracts ◽

10.1149/ma2018-02/18/754 ◽

2018 ◽

Keyword(s):

Magnetic Anisotropy ◽

Perpendicular Magnetic Anisotropy ◽

Tunneling Junction ◽

Magnetic Tunneling Junction ◽

Magnetic Tunneling

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