Bias-voltage controlled resistance in a magnetic tunneling junction with an inserted thin metallic layer

2013 ◽  
Vol 537 ◽  
pp. 198-201 ◽  
Author(s):  
Sui-Pin Chen
2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  

2017 ◽  
Vol 6 (9) ◽  
pp. N148-N154 ◽  
Author(s):  
Sungwoo Park ◽  
Kyungchae Yang ◽  
Hoseok Lee ◽  
Dongwoo Kim ◽  
Jongung Baek ◽  
...  

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.


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