Numerical Simulation of Electric Field Distribution along the DC-GIL Spacer with SF6/N2 Mixture

2018 ◽  
Author(s):  
B. X. Du ◽  
C. Zhang ◽  
J. Li ◽  
H. C. Liang ◽  
R. Chang ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution

Numerical Simulation of High Frequency Electromagnetic Wave in Microwave Cavity for Soot Oxidation

2013 ◽  
Vol 459 ◽  
pp. 310-318 ◽  
Author(s):  
Haitham B. Al-Wakeel ◽  
Zainal Ambri Abdul Karim ◽  
Hussain Hamoud Al-Kayiem ◽  
Hasan Fawad
Keyword(s):  
Numerical Simulation ◽  
Electric Field ◽  
Penetration Depth ◽  
Field Distribution ◽  
High Frequency ◽  
Electric Field Distribution ◽  
Soot Oxidation ◽  
Microwave Cavity ◽  
Field Pattern ◽  
The Impact

Soot oxidation temperature by high frequency electromagnetic energy was proposed using numerical simulation by combining electromagnetic with transient thermal analyses. Equation of electric field distribution in a microwave cavity with perfect electric conductor surfaces and TE10 mode is formulated from Helmholtz equation. The dissipated heat distribution is calculated from the electric field distribution. Six study cases for electric field and dissipated heat distributions were implemented by using ANSYS software based on finite element method. The impact of dielectric sample properties, position, size and shape inside the microwave cavity were predicted. The results from the simulation of electric field and dissipated heat were compared with available data in literature and showed the validity of the analysis. It was found that the electric field forming hot spots at penetration depth and front corners of the soot sample and penetration depth is equal to 12mm but equal to 0 for samples with dimensions less than penetration depth. Dissipated heat pattern depend on electric field pattern and dielectric properties.

scholarly journals О защите высоковольтных мезаструктурных 4H-SiC-приборов от поверхностного пробоя: прямая фаска

2020 ◽  
Vol 54 (2) ◽  
pp. 207
Author(s):  
Н.М. Лебедева ◽  
Н.Д. Ильинская ◽  
П.А. Иванов
Keyword(s):  
Numerical Simulation ◽  
Silicon Carbide ◽  
Electric Field ◽  
Field Distribution ◽  
High Voltage ◽  
Electric Field Distribution ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Edge Termination ◽  
Protection Method

Abstract The prospects for the protection of high-voltage 4 H -SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased mesa-epitaxial p ^+– p – n _0– n ^+ 4 H -SiC diodes is performed. It is shown that negative beveling with small angles of less than 10° from the plane of the p – n _0 junction makes it possible to reduce severalfold the surface edge electric field as compared to that in the bulk. A combined protection method is suggested as the edge-termination technique for 4 H -SiC diodes with a p ^+– n _0– n ^+ structure, Schottky diodes with an n _0 blocking base, and bipolar n ^+– p – n _0 transistors via the implantation of boron along with negative beveling. The possibility of fabricating mesa structures with inclined walls via the photolithography and dry etching of silicon carbide is briefly discussed.

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