Reverse polarity effect in Cu/Sn-9Zn/Ni interconnect under high current density at high temperature

Author(s):  
Mingliang Huang ◽  
Zhijie Zhang ◽  
Ning Zhao ◽  
Xiaofei Feng
2017 ◽  
Vol 2017 (1) ◽  
pp. 000093-000096
Author(s):  
Seungjun Noh ◽  
Chanyang Choe ◽  
Chuantong Chen ◽  
Shijo Nagao ◽  
Katsuaki Suganuma

Abstract This work introduces the possibility of using Ag sinter-paste as a novel high-temperature and high-current wire bonding solution. We investigated the electromigration (EM) behavior and lifetime of the sintered Ag wiring under high current density and high temperature required for the design of power electronic devices. The sinter Ag wiring fabricated on the two Cu substrates were tested under current densities of 2.7 × 104 A/cm2 at temperature of 250 °C. The microstructure evolution of sintered wiring was characterized after EM test. The resistance of sintered wiring did not change even after EM test for 300 hours, which confirms that the Ag-paste sinter wire bonding is rather stable than aluminum wire bonding under high temperature and high current density. No degradation was observed in microstructure of sintered wiring after EM test. Thus, it is expected that Ag paste sinter wire bonding is one of potential alternative interconnection technology for power electronic devices.


2014 ◽  
Vol 960-961 ◽  
pp. 742-745
Author(s):  
Meng Song ◽  
Lu Shun Su ◽  
Xu Zhi Deng ◽  
Li Ren ◽  
Shi Feng Shen ◽  
...  

Due to the high current density in 77K, the high temperature superconducting facilities are expected to improve the efficient in power transmission. Superconducting facilities electromagnetic design is highly dependent on the characteristic of the superconducting tape. As a result, the comparison of the effect of different tape in electromagnetic design should be studied. In this paper, several facilities model are used as example to analyze the effect of different tape utilization. The result shows in different application conditions, or, specific benefits are considered, there is a specific tape will be the best choice.


2000 ◽  
Vol 15 (11) ◽  
pp. 2387-2392 ◽  
Author(s):  
J. S. Huang ◽  
Chih Chen ◽  
C. C. Yeh ◽  
K. N. Tu ◽  
T. L. Shofner ◽  
...  

Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.


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