Comparison with the influence of different types of impulse currents on the degradation of Zinc-oxide varistors

Author(s):  
Weikang Li ◽  
Xueling Yao ◽  
Jinru Sun ◽  
Qingqing Li ◽  
Hao Wang ◽  
...  
1990 ◽  
Vol 25 (5) ◽  
pp. 2447-2453 ◽  
Author(s):  
T. Asokan ◽  
R. Freer

2016 ◽  
Vol 61 ◽  
pp. 91-94 ◽  
Author(s):  
Hao Jin ◽  
Xiao Xu ◽  
Yebo Tao ◽  
Bin Feng ◽  
Demiao Wang

2004 ◽  
Vol 85 (1) ◽  
pp. 123-128 ◽  
Author(s):  
Valeria Tohver ◽  
Sherry L. Morissette ◽  
Jennifer A. Lewis ◽  
Bruce A. Tuttle ◽  
James A. Voigt ◽  
...  

2002 ◽  
Vol 157 (6-12) ◽  
pp. 1051-1055 ◽  
Author(s):  
Witold Mielcarek ◽  
Dorota Nowak-woźny ◽  
Krystyna Prociów ◽  
Adam Gubański

1994 ◽  
Vol 76 (11) ◽  
pp. 7367-7371 ◽  
Author(s):  
R. W. Major ◽  
A. E. Werner ◽  
C. B. Wilson ◽  
F. A. Modine

2013 ◽  
Vol 582 ◽  
pp. 198-201
Author(s):  
Yosuke Tokoro ◽  
Takayuki Watanabe ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

The effects of the addition of tin oxide (SnO2) and yttrium oxide (Y2O3) to bismuth (Bi)-manganese (Mn)-cobalt (Co)-silicon (Si)-chromium (Cr)-nickel (Ni)-added zinc oxide (ZnO) varistors (a basic varistor) on the varistor voltage, resistance to electrical degradation, and leakage current were investigated. The addition of SnO2increased both the varistor voltage and the resistance to electrical degradation. However, simultaneous addition of both SnO2and Y2O3increased the varistor voltage but the resistance to electrical degradation deteriorated. ZnO varistors with varistor voltage over approximately 520 V/mm, excellent resistance to electrical degradation, and low leakage current could be obtained by adding SnO2with SnO2-to-ZnO molar ratio of approximately 1:10 to the basic varistor.


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