FPLAPW investigations of electronic properties of IIB0VI tellurides in the generalized gradient approximation

Author(s):  
H. Duan ◽  
X. S. Chen ◽  
Y. Huang ◽  
X. H. Zhou ◽  
W. Lu
Open Physics ◽  
2008 ◽  
Vol 6 (4) ◽  
Author(s):  
Ercan Uçgun ◽  
Hamza Ocak

AbstractWe calculate the electronic properties of austenite and martensite Fe-9%Mn alloys using the self consistent full-potential linearized-plane-wave method under the generalized gradient approximation full lattice relaxation. By minimizing total-energy, the lattice constants in their ground states were determined. We discuss the total energy dependence of the volume, and density of states (DOS).


2009 ◽  
Vol 23 (26) ◽  
pp. 5155-5161 ◽  
Author(s):  
A. ROUMILI ◽  
Y. MEDKOUR ◽  
D. MAOUCH

Using plane wave pseudopotential calculations and the generalized gradient approximation, we have studied the structural, elastic, and electronic properties of Hf 2 SnC and Hf 2 SnN . Lattice parameters and equilibrium volume are in satisfactory agreement with the experimental values. Electronic properties show a metallic character of both compounds. Bonds are originally made from hybridized Hf d– C p (or N p) states, and Hf d– Sn p states, confirmed by strong coupling between Hf–C (or N), and Hf–Sn bonding from the charge density distribution.


2012 ◽  
Vol 472-475 ◽  
pp. 1538-1543
Author(s):  
Qiang Luo ◽  
Zhi Zhang ◽  
Qiang Zhang ◽  
Tai He Shi ◽  
Zeng Ling Ran

Using the first principles method, which is based on the density function theory (DFT), the structures and electronic properties of S atoms are adsorbed on the Fe (100) surface for X(X is Cr, Ni, Mo, C, Mn ,Si,P and S) impurities in Fe, and their molecular orbital and absorption energies were calculated with the generalized gradient approximation. The results show that S adsorbed on H site for Cr, Ni, Mn, C and Mo impurities in Fe is stable but for Si, S and P is B site. The adsorption energy for Ni in impurity Fe is almost nearby for the purity Fe and the effect for Ni in S absorption on Fe (100) surface is very small. In order to prevent S absorption on Fe surface,we can reduce the percentage of Ni.


2006 ◽  
Vol 20 (07) ◽  
pp. 343-351 ◽  
Author(s):  
TAO WANG ◽  
JI-AN CHEN ◽  
XING LING ◽  
YONG-BING DAI ◽  
QING-YUAN DAI

The letter casts some light on the structural, elastic and electronic properties of C49- and C54-TiSi 2, using an ab initio plane-wave ultrasoft pseudopotential method based on generalized gradient approximation (GGA). An intrinsic advantage in the growth stage for C49 phase might explain its kinetically favored phenomena in a solid-state reaction.


2012 ◽  
Vol 194 ◽  
pp. 276-279 ◽  
Author(s):  
Gladys Patricia Abdel Rahim ◽  
Jairo Arbey Rodríguez

We study the structural and electronic properties of scandium carbide ScC and niobium carbide NbC in both the sodium chloride rock salt (NaCl) and wurtzite structures by means of accurate first principles total energy calculations. The calculations were performed employing the full-potential linearized plane wave method (FP-LAPW). We used the generalized gradient approximation (GGA) of Perdew Burke and Ernzerhof for the exchange and correlation potential. Volume optimization and density of states including spin (DOS) of the systems are presented.


RSC Advances ◽  
2018 ◽  
Vol 8 (25) ◽  
pp. 13850-13856 ◽  
Author(s):  
Assa Aravindh Sasikala Devi ◽  
Iman S. Roqan

The structural stability and magnetic properties of a grain boundary (GB) formed by two ZnO single crystals oriented at 45° is investigated by density functional theory, using generalized gradient approximation (GGA) with Hubbard parameter (U).


1994 ◽  
Vol 50 (11) ◽  
pp. 7291-7294 ◽  
Author(s):  
P. Söderlind ◽  
O. Eriksson ◽  
B. Johansson ◽  
J. M. Wills

2012 ◽  
Vol 26 (29) ◽  
pp. 1250151
Author(s):  
Z. H. YU ◽  
C. Y. LI ◽  
H. Z. LIU

Using the first-principles plane wave pseudopotential method, the structural and electronic properties of intermetallic compound SrLiSb have been studied within generalized gradient approximation in the frame of density functional theory. The calculations of lattice parameters are in well agreement with the available experimental data. The geometry optimization results indicated the compressibility of SrLiSb is anisotropic under high pressure. The energy band structure and density of states of SrLiSb were also calculated, indicating that SrLiSb has an electronic phase transition from direct-gap semiconductor to indirect-gap semiconductor at approximate 8 GPa.


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