Selective growth of InP in the low pressure hydride VPE system

2002 ◽  
Author(s):  
R. Beccard ◽  
A. Dehe ◽  
K. Heime ◽  
G. Laube ◽  
P. Speier
Keyword(s):  
Low Pressure ◽  
Selective Growth

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates

Selective growth of InP in the low pressure hydride VPE system

1991 ◽  
Vol 20 (12) ◽  
pp. 1033-1036 ◽  
Author(s):  
R. Beccard ◽  
A. Dehe ◽  
K. Heime ◽  
G. Laube ◽  
P. Speier
Keyword(s):  
Low Pressure ◽  
Selective Growth

Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

2018 ◽  
Vol 57 (8) ◽  
pp. 085501
Author(s):  
Yasuhiro Kusakabe ◽  
Hayata Sugiyama ◽  
Shun Takenaka ◽  
Yohei Suzuki ◽  
Takahiro Maruyama ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Low Pressure ◽  
Surface Cleaning ◽  
Selective Growth

A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

1990 ◽  
Vol 204 ◽  
Author(s):  
F.T.J. Smith
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Polycrystalline Material ◽  
Low Pressure ◽  
Selective Growth ◽  
Group V ◽  
Selective Epitaxial Growth ◽  
Crystal Material ◽  
Gaas Substrates ◽  
Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

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