A Comparison of Arsine and Tertiarybutylarsine as Precursors for the Selective Epitaxial Growth of GaAs and AlGaAs

Crystal Material ◽

Gaas Substrates ◽

Increasing Temperature

ABSTRACTWe have investigated the use of tertiarybutylarsine (tBAs) as an As source in the surface-selective growth of GaAs and AlGaAs by low-pressure OMVPE. Deposition was carried out onto GaAs substrates partly masked with SiNx. Triethylgallium (TEGa) and trimethylaluminum (TMAl) were used as precursors along with either arsine or tBAs. Growth pressures were in the range 0.3 to 3.0 Torr. The usual trends of decreasing deposition on the mask with increasing temperature, decreasing group V/III ratio, and decreasing pressure were observed. At very low group V/III ratios, for either As precursor, single crystal material with a pitted surface was obtained. A reduction in the nucleation of polycrystalline material on the mask was observed when tBAs was used in place of AsH3.

Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD Reactor

ECS Transactions ◽

10.1149/05009.0507ecst ◽

2013 ◽

Vol 50 (9) ◽

pp. 507-512 ◽

Cited By ~ 3

Author(s):

A. Sammak ◽

W. de Boer ◽

L. K. Nanver

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Selective Epitaxial Growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Selective epitaxial growth of Si[sub 1−x]Ge[sub x]/Si strained-layers in a tubular hot-wall low pressure chemical vapor deposition system

10.1116/1.589239 ◽

1997 ◽

Vol 15 (1) ◽

pp. 138 ◽

Cited By ~ 8

Author(s):

Wei-Chung Wang

Keyword(s):

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Strained Layers ◽

Pressure Chemical

Selective epitaxial growth of single‐crystal anthracene

Journal of Applied Physics ◽

10.1063/1.323891 ◽

1977 ◽

Vol 48 (5) ◽

pp. 2102-2103 ◽

Cited By ~ 1

Author(s):

Takashi Ono ◽

Mitsuteru Kimura ◽

Toshihiko Miyamoto

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Selective Epitaxial Growth

Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layers

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)02280-7 ◽

2003 ◽

Vol 251 (1-4) ◽

pp. 317-322 ◽

Cited By ~ 6

Author(s):

S. Sugahara ◽

M. Tanaka

Keyword(s):

Magnetic Properties ◽

Single Crystal ◽

Epitaxial Growth ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Buffer Layers ◽

Gaas Substrates

Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1994.587861 ◽

2002 ◽

Author(s):

C.K. Subramanian ◽

G.W. Neudeck

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Single Crystal Silicon ◽

Crystal Silicon ◽

Bipolar Junction Transistor ◽

Junction Transistor

Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact [111]B GaAs substrates: the effect of an ultrathin GaAs buffer layer

International Conference on Molecular Bean Epitaxy ◽

10.1109/mbe.2002.1037788 ◽

2003 ◽

Author(s):

S. Sugahara ◽

M. Tanaka

Keyword(s):

Magnetic Properties ◽

Single Crystal ◽

Epitaxial Growth ◽

Buffer Layer ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Gaas Substrates ◽

Gaas Buffer Layer

Lateral confinement by low pressure chemical vapor deposition-based selective epitaxial growth of Si1−xGex/Si nanostructures

Journal of Applied Physics ◽

10.1063/1.365212 ◽

1997 ◽

Vol 81 (10) ◽

pp. 6709-6715 ◽

Cited By ~ 23

Author(s):

L. Vescan ◽

C. Dieker ◽

A. Souifi ◽

T. Stoica

Keyword(s):

Epitaxial Growth ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Lateral Confinement ◽

Pressure Chemical ◽

Si Nanostructures

Ge-on-Si: Single-Crystal Selective Epitaxial Growth in a CVD reactor

ECS Meeting Abstracts ◽

10.1149/ma2012-02/43/3162 ◽

2012 ◽

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Selective Epitaxial Growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

10.1116/1.589576 ◽

1997 ◽

Vol 15 (6) ◽

pp. 1902 ◽

Cited By ~ 10

Author(s):

Poonacha Kongetira

Keyword(s):

Growth Rate ◽

Epitaxial Growth ◽

Hydrogen Chloride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

MRS Proceedings ◽

10.1557/proc-448-265 ◽

1996 ◽

Vol 448 ◽

Author(s):

I -M. Leet ◽

W. -C. Wang ◽

M. T. K. Koh ◽

J.P. Denton ◽

E. P. Kvam ◽

...

Keyword(s):

Epitaxial Growth ◽

Vapor Deposition ◽

Silicon Germanium ◽

Defect Density ◽

Low Cost ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

AbstractSelective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.