Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth

2018 ◽  
Vol 57 (8) ◽  
pp. 085501
Author(s):  
Yasuhiro Kusakabe ◽  
Hayata Sugiyama ◽  
Shun Takenaka ◽  
Yohei Suzuki ◽  
Takahiro Maruyama ◽  
...  
Keyword(s):  
Substrate Surface ◽  
Low Pressure ◽  
Surface Cleaning ◽  
Selective Growth

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization and global modelling of low-pressure hydrogen-based RF plasmas suitable for surface cleaning processes

2013 ◽  
Vol 46 (47) ◽  
pp. 475206 ◽  
Author(s):  
Nikola Škoro ◽  
Nevena Puač ◽  
Saša Lazović ◽  
Uroš Cvelbar ◽  
George Kokkoris ◽  
...  
Keyword(s):  
Low Pressure ◽  
Surface Cleaning ◽  
Rf Plasmas ◽  
Global Modelling ◽  
Pressure Hydrogen

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates

Selective Growth of Vertically-Aligned ZnO Nano-Needles

2006 ◽  
Vol 6 (11) ◽  
pp. 3351-3354 ◽  
Author(s):  
Sang Hyun Lee ◽  
Wook Hyun Lee ◽  
SeogWoo Lee ◽  
Hiroki Goto ◽  
Takeshi Baba ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Zinc Acetate ◽  
Substrate Surface ◽  
Green Emission ◽  
Selective Growth ◽  
Chemical Vapor Transport ◽  
Metal Catalyst ◽  
Ultraviolet Emission ◽  
Treated Area ◽  
Vertically Aligned

Vertically-aligned zinc oxide (ZnO) nano-needles have been selectively grown on the Si (100) substrates using chemical vapor transport and condensation method without metal catalyst. The selective nucleation of nano-needles was achieved by the controlled treatment of substrate surface using zinc acetate aqueous solution. The nano-needles were selectively grown on the zinc acetate treated area, while the nano-tetrapod structures were formed on the non-treated area. The nano-needles have uniform tip-diameter and length, about 10 nm and 2–3 μm, respectively. The angle of the ZnO nano-needles from the substrate was 90±0.2°. The structural and optical properties of nano-needles and nanotetrapod structures were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The results showed that ZnO nano-needles grow along the c-axis of the crystal plane due to the c-oriented ZnO nanoseeds formed by zinc acetate treatment. The nano-needles have strong ultraviolet emission peak of 3.29 eV with green emission of 2.3 eV at room temperature. This selective growth technique of vertical nano-needles using aqueous solution method has potential applications in the field emission devices or optoelectronic devices hybridized with silicon based electronic devices.

Selective growth of InP in the low pressure hydride VPE system

1991 ◽  
Vol 20 (12) ◽  
pp. 1033-1036 ◽  
Author(s):  
R. Beccard ◽  
A. Dehe ◽  
K. Heime ◽  
G. Laube ◽  
P. Speier
Keyword(s):  
Low Pressure ◽  
Selective Growth
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