High-speed InGaAs-based vertical Schottky barrier photodetectors

Author(s):  
W. Wohlmuth ◽  
J.-W. Seo ◽  
P. Pay ◽  
C. Caneau ◽  
I. Adesida
Keyword(s):  
1983 ◽  
Vol 30 (11) ◽  
pp. 1611-1612 ◽  
Author(s):  
S.Y. Wang ◽  
D.M. Bloom ◽  
D.M. Collins

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.


1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L180-L182 ◽  
Author(s):  
Youichi Sekiguchi ◽  
Tohru Kuwahara ◽  
Fumihiko Kobayashi ◽  
Shinji Iio

2004 ◽  
Vol 25 (4) ◽  
pp. 220-222 ◽  
Author(s):  
M. Fritze ◽  
C.L. Chen ◽  
S. Calawa ◽  
D. Yost ◽  
B. Wheeler ◽  
...  
Keyword(s):  

1997 ◽  
Vol 9 (10) ◽  
pp. 1388-1390 ◽  
Author(s):  
W.A. Wohlmuth ◽  
J.-W. Seo ◽  
P. Fay ◽  
C. Caneau ◽  
I. Adesida
Keyword(s):  

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