The high-speed ultraviolet photodetector of ZnO nanowire Schottky barrier based on the triboelectric-nanogenerator-powered surface-ionic-gate

Nano Energy ◽  
2019 ◽  
Vol 60 ◽  
pp. 680-688 ◽  
Author(s):  
Feng Yang ◽  
Mingli Zheng ◽  
Lei Zhao ◽  
Junmeng Guo ◽  
Bao Zhang ◽  
...  
Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 28
Author(s):  
Fangzhou Liang ◽  
Wen Chen ◽  
Meixin Feng ◽  
Yingnan Huang ◽  
Jianxun Liu ◽  
...  

GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.


2011 ◽  
Vol 99 (20) ◽  
pp. 203105 ◽  
Author(s):  
Gang Cheng ◽  
Xinghui Wu ◽  
Bing Liu ◽  
Bing Li ◽  
Xingtang Zhang ◽  
...  

1983 ◽  
Vol 30 (11) ◽  
pp. 1611-1612 ◽  
Author(s):  
S.Y. Wang ◽  
D.M. Bloom ◽  
D.M. Collins

2021 ◽  
pp. 1490-1499
Author(s):  
Chuguo Zhang ◽  
Yuebo Liu ◽  
Baofeng Zhang ◽  
Ou Yang ◽  
Wei Yuan ◽  
...  

Author(s):  
Yi Zhang ◽  
Ka Chung Chan ◽  
Sau Chung Fu ◽  
Christopher Yu Hang Chao

Abstract Flutter-driven triboelectric nanogenerator (FTENG) is one of the most promising methods to harvest small-scale wind energy. Wind causes self-fluttering motion of a flag in the FTENG to generate electricity by contact electrification. A lot of studies have been conducted to enhance the energy output by increasing the surface charge density of the flag, but only a few researches tried to increase the converting efficiency by enlarging the flapping motion. In this study, we show that by simply replacing the rigid flagpole in the FTENG with a flexible flagpole, the energy conversion efficiency is augmented and the energy output is enhanced. It is found that when the flag flutters, the flagpole also undergoes aerodynamic force. The lift force generated from the fluttering flag applies a periodic rotational moment on the flagpole, and causes the flagpole to vibrate. The vibration of the flagpole, in turn amplifies the flutter of the flag. Both the fluttering dynamics of the flags with rigid and flexible flagpoles have been recorded by a high-speed camera. When the flag was held by a flexible flagpole, the fluttering amplitude and the contact area between the flag and electrode plates were increased. The energy enhancement increased as the flow velocity increased and the enhancement can be 113 times when the wind velocity is 10 m/s. The thickness of the flagpole was investigated. An optimal output of open-circuit voltage reaching 1128 V (peak-to-peak value) or 312.40 V (RMS value), and short-circuit current reaching 127.67 μA (peak-to-peak value) or 31.99 μA (RMS value) at 12.21 m/s flow velocity was achieved. This research presents a simple design to enhance the output performance of an FTENG by amplifying the fluttering amplitude. Based on the performance obtained in this study, the improved FTENG has the potential to apply in a smart city for driving electronic devices as a power source for IoT applications.


2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.


1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L180-L182 ◽  
Author(s):  
Youichi Sekiguchi ◽  
Tohru Kuwahara ◽  
Fumihiko Kobayashi ◽  
Shinji Iio

2019 ◽  
Vol 12 (1) ◽  
pp. 1054-1060 ◽  
Author(s):  
Leixin Meng ◽  
Gaoda Li ◽  
Xiaoqiang Tian ◽  
Suo Bai ◽  
Qi Xu ◽  
...  

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