Hole impact ionization coefficient in [100]-oriented In/sub 0.53/Ga/sub 0.47/As based on pnp InAlAs/InGaAs HBTs

2002 ◽  
Author(s):  
D. Buttari ◽  
A. Chini ◽  
G. Meneghesso ◽  
E. Zanoni ◽  
D. Sawdai ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Ionization Coefficient

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

2005 ◽  
Vol 52 (10) ◽  
pp. 2290-2299 ◽  
Author(s):  
S. Reggiani ◽  
N. Jensen ◽  
G. Groos ◽  
M. Stecher ◽  
E. Gnani ◽  
...  
Keyword(s):  
Electron Impact ◽  
High Temperatures ◽  
Impact Ionization ◽  
Electron Impact Ionization ◽  
Ionization Coefficient ◽  
Very High

Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

2001 ◽  
Vol 680 ◽  
Author(s):  
You-Sang Lee ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Accurate Approximation ◽  
Ionization Coefficient ◽  
Zinc Blende ◽  
The Impact

ABSTRACTThe breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
You-Sang Lee ◽  
D.-S. Byeon ◽  
Y.-I. Choi ◽  
I.-Y. Park ◽  
Min-Koo Han
Keyword(s):  
Closed Form ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Analytic Solutions ◽  
Ionization Coefficient ◽  
Closed Form Solutions ◽  
The Impact ◽  
Effective Ionization

ABSTRACTThe closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].

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