Transmission line model test structure with four or more terminals: a novel method to characterize non-ideal planar ohmic contacts in presence of inhomogeneities

1990 ◽  
Author(s):  
L. Gutai
Keyword(s):  
Transmission Line ◽  
Model Test ◽  
Ohmic Contacts ◽  
Test Structure ◽  
Transmission Line Model ◽  
Line Model ◽  
Novel Method

Modified Linear Transmission Line Model Test Structure for Determining Specific Contact Resistance

MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 157-162
Author(s):  
G.K. Reeves ◽  
Y. Pan ◽  
P.W. Leech ◽  
A.S. Holland
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Model Test ◽  
Element Model ◽  
Test Structure ◽  
Specific Contact Resistance ◽  
Transmission Line Model ◽  
Line Model ◽  
Linear Pattern ◽  
Specific Contact

ABSTRACTA modified design of the transmission line model test structure uses the simple calculation of specific contact resistance, ρc, based on a two contact linear pattern but without the requirement of a mesa etch. This modified structure uses a linear TLM with semicircular terminations at each end. The function of the semicircular terminations is to confine the fringing fields at the ends of the linear TLM contacts. Simple analytical equations for determining ρc have been developed on the basis of the modified linear TLM pattern. These calculations have shown good agreement with a finite element model (FEM) of the modified TLM test structure using typical parameters for metal/ SiC contacts.

An Electrical Model for Multilayered n+/n and Heterostructure Planar Ohmic Contacts

1995 ◽  
Vol 382 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick W. Leech ◽  
H. Barry Harrison
Keyword(s):  
Transmission Line ◽  
Ohmic Contacts ◽  
Electrical Network ◽  
Transmission Line Model ◽  
Line Model ◽  
Planar Structures ◽  
Parasitic Resistance ◽  
Device Structures ◽  
Complex Models ◽  
Device Properties

ABSTRACTThe standard Transmission Line Model (TLM) is an electrical network that is commonly used to model planar two-layer (metal-semiconductor) ohmic contacts. More complex multilayered planar structures have led to the development of more complex models. A Tri-Layer Transmission Line Model (TLTLM) was recently proposed in order to more accurately represent an alloyed ohmic contact. The TLTLM also enables other layered planar contact structures such as non-alloyed n+/n, heterojunction and metal-silicide-silicon contacts to be analysed. In this paper, it is shown that when the TLTLM is combined with a modified TLM network, important device properties such as contact and parasitic resistance can be derived for device structures using several epilayers such as FET's. An example is given of the current distribution in an FET and the calculation of the parasitic resistance in the gate-drain channel and the contact resistance of the drain.

A New Electrical Model for Calculating the Sheet Resistance Parameter in Alloyed Ohmic Contacts

1994 ◽  
Vol 337 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
H. Barry Harrison
Keyword(s):  
Transmission Line ◽  
Sheet Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Metal Layer ◽  
Semiconductor Layer ◽  
Specific Contact Resistance ◽  
Transmission Line Model ◽  
Line Model ◽  
Specific Contact

ABSTRACTThis paper briefly reviews the standard Transmission Line Model (TLM) commonly used to measure the specific contact resistance ρc and the sheet resistance Rsk beneath a planar ohmic contact. In the case of an alloyed ohmic contact, a more realistic three layer (Tri-Layer Transmission Line Model (TLTLM)) can be used for the analysis. This model is based on three layers (metal layer, alloyed semiconductor layer and the unalloyed semiconductor layer) and the two interfaces between them. By using appropriate TLTLM parameters, it is possible to calculate the sheet resistance Rsk that has been experimentally derived from the standard TLM. The new TLTLM model predicts that values of Rsk greater and less than Rsh (the unmodified epitaxial layer sheet resistance) are possible in agreement with experimentally reported observations.

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